| Μέρος αριθ | Κατασκευαστής | Εφαρμογή |
|---|
| P6KE300C | JGD | 400 Watt peak power. Transient voltage suppressor diode. Nominal voltage 300 V. Bidirectional. |
| SMAJ20A | JGD | 400 W peak pulse power. Surface mount transient voltage suppressor. Working peak reverse voltage 20 V. |
| SMBJ5914B | JGD | 1.5W silicon surface mount zener diode. Zener voltage 3.6 V. Test current 104.2 mA. +-5% tolerance. |
| 1N4116D | JGD | 500mW low noise silicon zener diode. Nominal zener voltage 24V. 1% tolerance. |
| SMAJ75CA | JGD | 400 W peak pulse power. Surface mount transient voltage suppressor. Working peak reverse voltage 75 V. Bidirectional. |
| KBPC1001 | JGD | Single phase 10 A silicon bridge rectifier. Max recurrent peak reverse voltage 100V. |
| 1N5518C | JGD | 0.4 W, low voltage avalanche diode. Nominal zener voltage 3.3 V. Test current 20 mAdc. +-2% tolerance. |
| UF5406G | JGD | Glass passivated ultra fast rectifier. Max recurrent peak reverse voltage 600 V. Max average forward rectified current 3.0 A. |
| SMAJ22A | JGD | 400 W peak pulse power. Surface mount transient voltage suppressor. Working peak reverse voltage 22 V. |
| 1N5924D | JGD | 1.5 W, silicon zener diode. Zener voltage 9.1V. Test current 41.2 mA. +-1% tolerance. |
| P4KE11C | JGD | 400 Watt peak power. Transient voltage suppressor diode. Nominal voltage 11 V. Bidirectional. |
| MSBL054 | JGD | Single phase 0.5A glass passivated bridge rectifier. Repetitive peak reverse voltage 400V. |
| SMAJ5.0A | JGD | 400 W peak pulse power. Surface mount transient voltage suppressor. Working peak reverse voltage 5.0 V. |
| 3EZ3.9D2 | JGD | 3 W, silicon zener diode. Nominal voltage 3.9V, current 192mA, +-2% tolerance. |
| ES1D | JGD | 1.0 A super fast recovery silicon rectifier. Max recurrent peak reverse voltage 200 V. |
| 3EZ170D2 | JGD | 3 W, silicon zener diode. Nominal voltage 170 V, current 4.4 mA, +-2% tolerance. |
| FR151G | JGD | 1.5A, glass passivated fast recovery rectifier. Max recurrent peak reverse voltage 50V. |
| 1N971D | JGD | 0.5W, silicon zener diode. Zener voltage 27V. Test current 4.6mA. +-1% tolerance. |
| ZMM5234C | JGD | Surface mount zener diode. Nominal zener voltage 6.2 V. Test current 20 mA. +-10% tolerance. |
| P6KE160C | JGD | 400 Watt peak power. Transient voltage suppressor diode. Nominal voltage 160 V. Bidirectional. |
| SMBJ20A | JGD | Surface mount transient voltage suppressor. Breakdown voltage 22.2 V (min), 24.5 V (max). Test current 1.0 mA. |
| SMBJ5938D | JGD | 1.5W silicon surface mount zener diode. Zener voltage 36 V. Test current 10.4 mA. +-1% tolerance. |
| 1N4734A | JGD | 1W zener diode. Zener voltage 5.6V. |
| 1N5954B | JGD | 1.5 W, silicon zener diode. Zener voltage 160 V. Test current 2.3 mA. +-5% tolerance. |
| KBP208 | JGD | Single-phase 2.0 A silicon bridge rectifier. Max recurrent peak reverse voltage 800V. |
| 1N963A | JGD | 0.5W, silicon zener diode. Zener voltage 12V. Test current 10.5mA. +-10% tolerance. |
| ZMM5247A | JGD | Surface mount zener diode. Nominal zener voltage 17 V. Test current 7.4 mA. +-3% tolerance. |
| SFR306 | JGD | Soft fast recovery rectifier. Max recurrent peak reverse voltage 800 V. Max average forward current 3.0 A. |
| 1N971A | JGD | 0.5W, silicon zener diode. Zener voltage 27V. Test current 4.6mA. +-10% tolerance. |
| SMBJ5935D | JGD | 1.5W silicon surface mount zener diode. Zener voltage 27 V. Test current 13.9 mA. +-1% tolerance. |
