| Μέρος αριθ | Κατασκευαστής | Εφαρμογή |
|---|
| KBP204G | JGD | Single-phase 2.0 A glass passivated bridge rectifier. Max recurrent peak reverse voltage 400V. |
| KBU602 | JGD | Single phase 6.0 A silicon bridge rectifier. Max recurrent peak reverse voltage 200V. |
| MDB051 | JGD | Single phase 0.5 A glass passivated bridge rectifier. Repetitive peak reverse voltage 100V. |
| SMBJ5930B | JGD | 1.5W silicon surface mount zener diode. Zener voltage 16 V. Test current 23.4 mA. +-5% tolerance. |
| SMBJ45A | JGD | Surface mount transient voltage suppressor. Breakdown voltage 50.0 V (min), 55.3 V (max). Test current 1.0 mA. |
| 3EZ180D3 | JGD | 3 W, silicon zener diode. Nominal voltage 180 V, current 4.2 mA, +-3% tolerance. |
| FS1J | JGD | 1.0A, fast recovery silicon rectifier. Max recurrent peak reverse voltage 600V. |
| FR104G | JGD | 1.0A, glass passivated fast recovery rectifier. Max recurrent peak reverse voltage 400V. |
| 1N957C | JGD | 0.5W, silicon zener diode. Zener voltage 6.8V. Test current 18.5mA. +-2% tolerance. |
| KBPC302 | JGD | Single phase 3.0 A silicon bridge rectifier. Max recurrent peak reverse voltage 200V. |
| 1N5544C | JGD | 0.4 W, low voltage avalanche diode. Nominal zener voltage 28.0 V. Test current 1.0 mAdc. +-2% tolerance. |
| FR607G | JGD | 6.0A, glass passivated fast recovery rectifier. Max recurrent peak reverse voltage 1000V. |
| SMBJ5933A | JGD | 1.5W silicon surface mount zener diode. Zener voltage 22 V. Test current 17.0 mA. +-10% tolerance. |
| SMAJ60A | JGD | 400 W peak pulse power. Surface mount transient voltage suppressor. Working peak reverse voltage 60 V. |
| 1N5522A | JGD | 0.4 W, low voltage avalanche diode. Nominal zener voltage 4.7 V. Test current 10 mAdc. +-10% tolerance. |
| P6KE12C | JGD | 400 Watt peak power. Transient voltage suppressor diode. Nominal voltage 12 V. Bidirectional. |
| HER303G | JGD | 3.0 A, glass passivated high efficiency rectifier. Max recurrent peak reverse voltage 200V. |
| 3EZ39D1 | JGD | 3 W, silicon zener diode. Nominal voltage 39 V, current 19 mA, +-1% tolerance. |
| BB814 | JGD | Surface mount switching diode. |
| 1N5941B | JGD | 1.5 W, silicon zener diode. Zener voltage 47 V. Test current 8.0 mA. +-5% tolerance. |
| P4KE51C | JGD | 400 Watt peak power. Transient voltage suppressor diode. Nominal voltage 51 V. Bidirectional. |
| 3EZ9.1D10 | JGD | 3 W, silicon zener diode. Nominal voltage 9.1 V, current 82 mA, +-10% tolerance. |
| P6KE150 | JGD | 400 Watt peak power. Transient voltage suppressor diode. Nominal voltage 150 V. |
| 1N4622D | JGD | 500mW low noise silicon zener diode. Nominal zener voltage 3.9V. 1% tolerance. |
| 1N991C | JGD | 0.5W, silicon zener diode. Zener voltage 180V. Test current 0.68mA. +-2% tolerance. |
| HER203G | JGD | 2.0 A, glass passivated high efficiency rectifier. Max recurrent peak reverse voltage 200V. |
| SMBJ12A | JGD | Surface mount transient voltage suppressor. Breakdown voltage 13.3 V (min), 14.7 V (max). Test current 1.0 mA. |
| 1N4760 | JGD | 1W zener diode. Nominal zener voltage 68V. 10% tolerance. |
| UF4003 | JGD | Ultra fast rectifier. Max recurrent peak reverse voltage 200 V. Max average forward rectified current 1.0 A. |
| P6KE33 | JGD | 400 Watt peak power. Transient voltage suppressor diode. Nominal voltage 33 V. |
