| Μέρος αριθ | Κατασκευαστής | Εφαρμογή |
|---|
| 3EZ8.2D1 | JGD | 3 W, silicon zener diode. Nominal voltage 8.2 V, current 91 mA, +-1% tolerance. |
| 1N5952 | JGD | 1.5 W, silicon zener diode. Zener voltage 130 V. Test current 2.9 mA. +-20% tolerance. |
| 1N5952B | JGD | 1.5 W, silicon zener diode. Zener voltage 130 V. Test current 2.9 mA. +-5% tolerance. |
| SMBJ160A | JGD | Surface mount transient voltage suppressor. Breakdown voltage 178 V (min), 197 V (max). Test current 1.0 mA. |
| P6KE22C | JGD | 400 Watt peak power. Transient voltage suppressor diode. Nominal voltage 22 V. Bidirectional. |
| 1N963D | JGD | 0.5W, silicon zener diode. Zener voltage 12V. Test current 10.5mA. +-1% tolerance. |
| SMBJ12C | JGD | Surface mount transient voltage suppressor. Breakdown voltage 13.3 V (min), 16.3 V (max). Test current 1.0 mA. Bidirectional. |
| 1N966B | JGD | 0.5W, silicon zener diode. Zener voltage 16V. Test current 7.8mA. +-5% tolerance. |
| FR204 | JGD | 2.0A, fast recovery rectifier. Max recurrent peak reverse voltage 400V. |
| FR202G | JGD | 2.0A, glass passivated fast recovery rectifier. Max recurrent peak reverse voltage 100V. |
| 3EZ51D | JGD | 3 W, silicon zener diode. Nominal voltage 51 V, current 15 mA, +-20% tolerance. |
| MUR440 | JGD | 4.0A ultra fast rectifier. Max recurrent peak reverse voltage 400V. |
| SMBJ5951C | JGD | 1.5W silicon surface mount zener diode. Zener voltage 120 V. Test current 3.1 mA. +-2% tolerance. |
| 3EZ24D1 | JGD | 3 W, silicon zener diode. Nominal voltage 24 V, current 31 mA, +-1% tolerance. |
| 1N5819 | JGD | 1.0 A, schottky barrier rectifier. Max reccurent peak reverse voltage 40 V, max RMS voltage 28 V, max DC blocking voltage 40 V. |
| 1N5946 | JGD | 1.5 W, silicon zener diode. Zener voltage 75 V. Test current 5.0 mA. +-20% tolerance. |
| P4KE170 | JGD | 400 Watt peak power. Transient voltage suppressor diode. Nominal voltage 170 V. |
| MMBZ5243B | JGD | Surface mount zener diode. Nominal zener voltage 13.0V, test current 9.5mA. |
| P4KE100 | JGD | 400 Watt peak power. Transient voltage suppressor diode. Nominal voltage 100 V. |
| HER155 | JGD | 1.5 A, high efficiency rectifier. Max recurrent peak reverse voltage 400V. |
| 1N965 | JGD | 0.5W, silicon zener diode. Zener voltage 15V. Test current 8.5mA. +-20% tolerance. |
| 1N5407G | JGD | 3.0 A, glass passivated rectifier. Max recurrent peak reverse voltage 800 V, max RMS voltage 560 V, max D. C blocking voltage 800 V. |
| HER608 | JGD | 6.0 A, high efficiency rectifier. Max recurrent peak reverse voltage 1000V. |
| SMAJ17C | JGD | 400 W peak pulse power. Surface mount transient voltage suppressor. Working peak reverse voltage 17 V. Bidirectional. |
| 1N4743D | JGD | 1W zener diode. Nominal zener voltage 13V. 1% tolerance. |
| MMBD4448 | JGD | Surface mount switching diode. Max forward voltage 1.00V at 100mA. |
| SF64 | JGD | Super fast rectifier. Max recurrent peak reverse voltage 200 V. Max average forward current 6.0 A. |
| ZMM5224A | JGD | Surface mount zener diode. Nominal zener voltage 2.8 V. Test current 20 mA. +-3% tolerance. |
| 1N4619D | JGD | 500mW low noise silicon zener diode. Nominal zener voltage 3.0V. 1% tolerance. |
| SS13 | JGD | Surface mount schottky barrier rectifier. Max recurrent peak reverse voltage 30 V. Max average forward rectified current 1.0 A. |
