| Μέρος αριθ | Κατασκευαστής | Εφαρμογή |
|---|
| SF13G | JGD | Glass passivated super fast rectifier. Max recurrent peak reverse voltage 150 V. Max average forward current 1.0 A. |
| SMBJ5913B | JGD | 1.5W silicon surface mount zener diode. Zener voltage 3.3 V. Test current 113.6 mA. +-5% tolerance. |
| 1N5397G | JGD | 1.5 A, glass passivated rectifier. Max recurrent peak reverse voltage 600 V, max RMS voltage 420 V, max D. C blocking voltage 600 V. |
| 1N990C | JGD | 0.5W, silicon zener diode. Zener voltage 160V. Test current 0.80mA. +-2% tolerance. |
| SFA15G | JGD | Glass passivated super fast rectifier. Max recurrent peak reverse voltage 300 V. Max average forward current 1.0 A. |
| 1N5949A | JGD | 1.5 W, silicon zener diode. Zener voltage 100 V. Test current 3.7 mA. +-10% tolerance. |
| SR502 | JGD | Schottky barrier rectifier. Max recurrent peak reverse voltage 20 V. Max average forward current 5.0 A. |
| SMAJ160C | JGD | 400 W peak pulse power. Surface mount transient voltage suppressor. Working peak reverse voltage 160 V. Bidirectional. |
| SMBJ5920 | JGD | 1.5W silicon surface mount zener diode. Zener voltage 6.2 V. Test current 60.5 mA. +-20% tolerance. |
| 1N5522C | JGD | 0.4 W, low voltage avalanche diode. Nominal zener voltage 4.7 V. Test current 10 mAdc. +-2% tolerance. |
| SMAJ15CA | JGD | 400 W peak pulse power. Surface mount transient voltage suppressor. Working peak reverse voltage 15 V. Bidirectional. |
| 3EZ33D4 | JGD | 3 W, silicon zener diode. Nominal voltage 33 V, current 23 mA, +-4% tolerance. |
| P6KE100 | JGD | 400 Watt peak power. Transient voltage suppressor diode. Nominal voltage 100 V. |
| SMBJ5949D | JGD | 1.5W silicon surface mount zener diode. Zener voltage 100 V. Test current 3.7 mA. +-1% tolerance. |
| 3EZ5.1D3 | JGD | 3 W, silicon zener diode. Nominal voltage 5.1 V, current 147 mA, +-3% tolerance. |
| ZMM5235D | JGD | Surface mount zener diode. Nominal zener voltage 6.8 V. Test current 20 mA. +-20% tolerance. |
| P6KE100CA | JGD | 400 Watt peak power. Transient voltage suppressor diode. Nominal voltage 100 V. Bidirectional. |
| P6KE18A | JGD | 400 Watt peak power. Transient voltage suppressor diode. Nominal voltage 18 V. |
| 3EZ51D1 | JGD | 3 W, silicon zener diode. Nominal voltage 51 V, current 15 mA, +-1% tolerance. |
| SMBJ78 | JGD | Surface mount transient voltage suppressor. Breakdown voltage 86.7 V (min), 106 V (max). Test current 1.0 mA. |
| W08MG | JGD | Miniature single phase glass passivated bridge rectifier. Max recurrent peak reverse voltage 800 V. Max average forward rectified current 1.5 A. |
| 1N4730A | JGD | 1W zener diode. Zener voltage 3.9V. |
| 3EZ130D10 | JGD | 3 W, silicon zener diode. Nominal voltage 130 V, current 5.8 mA, +-10% tolerance. |
| BZX84C36 | JGD | 350mW zener diode, 36V |
| P4KE300CA | JGD | 400 Watt peak power. Transient voltage suppressor diode. Nominal voltage 300 V. Bidirectional. |
| SMAJ20CA | JGD | 400 W peak pulse power. Surface mount transient voltage suppressor. Working peak reverse voltage 20 V. Bidirectional. |
| SMBJ54 | JGD | Surface mount transient voltage suppressor. Breakdown voltage 60.0 V (min), 73.3 V (max). Test current 1.0 mA. |
| KBPC600 | JGD | Single phase 6.0 A silicon bridge rectifier. Max recurrent peak reverse voltage 50V. |
| EM513 | JGD | 0.5 A silicon rectifier. Max recurrent peak reverse voltage 1600 V. |
| HER157 | JGD | 1.5 A, high efficiency rectifier. Max recurrent peak reverse voltage 800V. |
