| Μέρος αριθ | Κατασκευαστής | Εφαρμογή |
|---|
| P6KE150A | MDE Semiconductor | 128.00V; 1mA ;600W peak pulse power; glass passivated junction transient voltage suppressor (TVS) diode. For bipolar applications |
| SMCJ43A | MDE Semiconductor | 43.00V; 1mA ;1500W peak pulse power; surface mount transient transient voltage suppressor. For bipolar applications |
| P4KE110A | MDE Semiconductor | 94.00V; 1mA ;400W peak pulse power; glass passivated junction transient voltage suppressor (TVS) diode. For bipolar applications |
| 1.5KE7.5A | MDE Semiconductor | 6.40V; 10mA ;1500W peak pulse power; glass passivated junction transient voltage suppressor |
| 1N6378 | MDE Semiconductor | 18.00V; 50A ;1500W peak pulse power; glass passivated junction transient voltage suppressor |
| SA11A | MDE Semiconductor | 11.00V; 1mA ;500W peak pulse power; glass passivated junction transient voltage suppressor (TVS) diode. For bipolar applications |
| 5KP24A | MDE Semiconductor | 24.00V; 5mA ;5000W peak pulse power; glass passivated junction transient voltage suppressor. For bipolar applications |
| MAX20-10.0CA | MDE Semiconductor | 10.00V; 5.0A ;20000W peak pulse power; high current transient voltage suppressor (TVS) diode. For bipolar applications |
| 30KW54 | MDE Semiconductor | 54.00V; 5mA ;15000W peak pulse power; glass passivated junction transient voltage suppressor. For bipolar applications |
| P6KE9.1A | MDE Semiconductor | 7.78V; 10mA ;600W peak pulse power; glass passivated junction transient voltage suppressor (TVS) diode. For bipolar applications |
| 1.5KE18 | MDE Semiconductor | 13.60V; 1mA ;1500W peak pulse power; glass passivated junction transient voltage suppressor |
| MAX20-16.0CA | MDE Semiconductor | 16.00V; 5.0A ;20000W peak pulse power; high current transient voltage suppressor (TVS) diode. For bipolar applications |
| SMCJ33A | MDE Semiconductor | 33.00V; 1mA ;1500W peak pulse power; surface mount transient transient voltage suppressor. For bipolar applications |
| MDE-40D112K | MDE Semiconductor | 1100V; max peak current40000A; metal oxide varistor. High energy series 40mm single disc |
| MDE-34S271K | MDE Semiconductor | 270V; max peak current40000A; Tmax=11; metal oxide varistor. High energy series 34mm single square |
| MAX20-45.0C | MDE Semiconductor | 45.00V; 5.0A ;20000W peak pulse power; high current transient voltage suppressor (TVS) diode. For bipolar applications |
| LCE8.5 | MDE Semiconductor | 8.50V; 1mA ;1500W peak pulse power; low capacitance transient voltage suppressor. Ideal for data line applications |
| SMCJ48A | MDE Semiconductor | 48.00V; 1mA ;1500W peak pulse power; surface mount transient transient voltage suppressor. For bipolar applications |
| 1.5KE82A | MDE Semiconductor | 70.10V; 1mA ;1500W peak pulse power; glass passivated junction transient voltage suppressor |
| 30KW120 | MDE Semiconductor | 120.00V; 5mA ;15000W peak pulse power; glass passivated junction transient voltage suppressor. For bipolar applications |
| 1.5KE36A | MDE Semiconductor | 30.80V; 10mA ;1500W peak pulse power; glass passivated junction transient voltage suppressor for TVS modules and hybrid circuit applications |
| MAX20-60.0C | MDE Semiconductor | 60.00V; 5.0A ;20000W peak pulse power; high current transient voltage suppressor (TVS) diode. For bipolar applications |
| 1.5KE7.5A | MDE Semiconductor | 6.40V; 10mA ;1500W peak pulse power; glass passivated junction transient voltage suppressor for TVS modules and hybrid circuit applications |
| 1.5KE36A | MDE Semiconductor | 30.80V; 1mA ;1500W peak pulse power; glass passivated junction transient voltage suppressor |
| SA130 | MDE Semiconductor | 130.00V; 1mA ;500W peak pulse power; glass passivated junction transient voltage suppressor (TVS) diode. For bipolar applications |
| 1.5KE120 | MDE Semiconductor | 97.20V; 1mA ;1500W peak pulse power; glass passivated junction transient voltage suppressor for TVS modules and hybrid circuit applications |
| P6KE12A | MDE Semiconductor | 10.20V; 1mA ;600W peak pulse power; glass passivated junction transient voltage suppressor (TVS) diode. For bipolar applications |
| SMLJ30A | MDE Semiconductor | 30.00V; 1mA; 3000W peak pulse power; surface mount transient transient voltage suppressor. For bipolar applications |
| SMDJ24 | MDE Semiconductor | 24.00V; 1mA ;3000W peak pulse power; surface mount transient transient voltage suppressor. For bipolar applications |
| 15KP110 | MDE Semiconductor | 110V; 5mA ;15000W peak pulse power; glass passivated junction transient voltage suppressor |
