| Μέρος αριθ | Κατασκευαστής | Εφαρμογή |
|---|
| ICTE-10 | MDE Semiconductor | 10.00V; 90A ;1500W peak pulse power; glass passivated junction transient voltage suppressor |
| P4KE16 | MDE Semiconductor | 12.80V; 1mA ;400W peak pulse power; glass passivated junction transient voltage suppressor (TVS) diode. For bipolar applications |
| 1.5KE6.8.0A | MDE Semiconductor | 5.80V; 10mA ;1500W peak pulse power; glass passivated junction transient voltage suppressor |
| MDE-34S781K | MDE Semiconductor | 780V; max peak current40000A; Tmax=13; metal oxide varistor. High energy series 34mm single square |
| MDE-40D361K | MDE Semiconductor | 360V; max peak current40000A; metal oxide varistor. High energy series 40mm single disc |
| P6KE150 | MDE Semiconductor | 121.00V; 1mA ;600W peak pulse power; glass passivated junction transient voltage suppressor (TVS) diode. For bipolar applications |
| MDE-53D201K | MDE Semiconductor | 200V; max peak current70000A; metal oxide varistor. High energy series 53mm single disc |
| 15KW26 | MDE Semiconductor | 26.0V; 5mA ;15000W peak pulse power; glass passivated junction transient voltage suppressor |
| MDE-5D201K | MDE Semiconductor | 200V; max peak current800A; metal oxide varistor. Standard D series 5mm disc |
| ICTE-36C | MDE Semiconductor | 36.00V; 23A ;1500W peak pulse power; glass passivated junction transient voltage suppressor |
| SMDJ11A | MDE Semiconductor | 11.00V; 1mA ;3000W peak pulse power; surface mount transient transient voltage suppressor. For bipolar applications |
| MDE-34S391K | MDE Semiconductor | 390V; max peak current40000A; Tmax=12; metal oxide varistor. High energy series 34mm single square |
| 5KP60A | MDE Semiconductor | 60.00V; 5mA ;5000W peak pulse power; glass passivated junction transient voltage suppressor. For bipolar applications |
| MDE-25D122K | MDE Semiconductor | 1200V; max peak current18000A; metal oxide varistor. Standard D series 25mm disc |
| P6KE68A | MDE Semiconductor | 58.10V; 1mA ;600W peak pulse power; glass passivated junction transient voltage suppressor (TVS) diode. For bipolar applications |
| 1N6380 | MDE Semiconductor | 22.00V; 40A ;1500W peak pulse power; glass passivated junction transient voltage suppressor |
| MDE-20D201K | MDE Semiconductor | 200V; max peak current10000A; metal oxide varistor. Standard D series 20mm disc |
| MDE-53D511K | MDE Semiconductor | 510V; max peak current70000A; metal oxide varistor. High energy series 53mm single disc |
| MAX40-5.0CA | MDE Semiconductor | 5.00V; 50mA ;40000W peak pulse power; high current transient voltage suppressor (TVS) diode. For bipolar applications |
| SMCJ85 | MDE Semiconductor | 85.00V; 1mA ;1500W peak pulse power; surface mount transient transient voltage suppressor. For bipolar applications |
| 30KW132A | MDE Semiconductor | 132.00V; 5mA ;15000W peak pulse power; glass passivated junction transient voltage suppressor. For bipolar applications |
| ICTE-18C | MDE Semiconductor | 18.00V; 50A ;1500W peak pulse power; glass passivated junction transient voltage suppressor |
| MDE-14D180M | MDE Semiconductor | 18V; max peak current2000A; metal oxide varistor. Standard D series 14mm disc |
| MAX20-58.0CA | MDE Semiconductor | 58.00V; 5.0A ;20000W peak pulse power; high current transient voltage suppressor (TVS) diode. For bipolar applications |
| MAX40-130.0CA | MDE Semiconductor | 130.00V; 5.0A ;40000W peak pulse power; high current transient voltage suppressor (TVS) diode. For bipolar applications |
| SA51 | MDE Semiconductor | 51.00V; 1mA ;500W peak pulse power; glass passivated junction transient voltage suppressor (TVS) diode. For bipolar applications |
| SMLJ6.0A | MDE Semiconductor | 6.00V; 10mA; 3000W peak pulse power; surface mount transient transient voltage suppressor. For bipolar applications |
| SMLJ130 | MDE Semiconductor | 130.00V; 1mA; 3000W peak pulse power; surface mount transient transient voltage suppressor. For bipolar applications |
| 20KW144 | MDE Semiconductor | 144.00V; 5mA ;15000W peak pulse power; glass passivated junction transient voltage suppressor |
| SMBJ43 | MDE Semiconductor | 43.00V; 1mA ;600W peak pulse power; surface mount transient transient voltage suppressor. For bipolar applications |
