| Μέρος αριθ | Κατασκευαστής | Εφαρμογή |
|---|
| MAX40-9.0C | MDE Semiconductor | 9.00V; 5.0A ;40000W peak pulse power; high current transient voltage suppressor (TVS) diode. For bipolar applications |
| 30KW144 | MDE Semiconductor | 144.00V; 5mA ;15000W peak pulse power; glass passivated junction transient voltage suppressor. For bipolar applications |
| 15KW17A | MDE Semiconductor | 17.00V; 50mA ;15000W peak pulse power; glass passivated junction transient voltage suppressor |
| MDE-40D331K | MDE Semiconductor | 330V; max peak current40000A; metal oxide varistor. High energy series 40mm single disc |
| MDE-25D201K | MDE Semiconductor | 200V; max peak current18000A; metal oxide varistor. Standard D series 25mm disc |
| MAX40-51.0C | MDE Semiconductor | 51.00V; 5.0A ;40000W peak pulse power; high current transient voltage suppressor (TVS) diode. For bipolar applications |
| 30KW156 | MDE Semiconductor | 156.00V; 5mA ;15000W peak pulse power; glass passivated junction transient voltage suppressor. For bipolar applications |
| 1.5KE180 | MDE Semiconductor | 146.00V; 1mA ;1500W peak pulse power; glass passivated junction transient voltage suppressor for TVS modules and hybrid circuit applications |
| 1.5KE8.2 | MDE Semiconductor | 6.63V; 10mA ;1500W peak pulse power; glass passivated junction transient voltage suppressor for TVS modules and hybrid circuit applications |
| SMDJ54 | MDE Semiconductor | 54.00V; 1mA ;3000W peak pulse power; surface mount transient transient voltage suppressor. For bipolar applications |
| SMAJ16A | MDE Semiconductor | 16.00V; 1mA ;400W peak pulse power; surface mount transient transient voltage suppressor. For bipolar applications |
| 1.5KE200A | MDE Semiconductor | 171.00V; 1mA ;1500W peak pulse power; glass passivated junction transient voltage suppressor for TVS modules and hybrid circuit applications |
| SMLJ28 | MDE Semiconductor | 28.00V; 1mA; 3000W peak pulse power; surface mount transient transient voltage suppressor. For bipolar applications |
| SMCJ100 | MDE Semiconductor | 100.00V; 1mA ;1500W peak pulse power; surface mount transient transient voltage suppressor. For bipolar applications |
| 1.5KE22A | MDE Semiconductor | 18.80V; 10mA ;1500W peak pulse power; glass passivated junction transient voltage suppressor for TVS modules and hybrid circuit applications |
| MAX40-33.0C | MDE Semiconductor | 33.00V; 5.0A ;40000W peak pulse power; high current transient voltage suppressor (TVS) diode. For bipolar applications |
| MDE-7D561M | MDE Semiconductor | 560V; max peak current1750A; metal oxide varistor. Standard D series 7mm disc |
| SMBJ58A | MDE Semiconductor | 58.00V; 1mA ;600W peak pulse power; surface mount transient transient voltage suppressor. For bipolar applications |
| P6KE36A | MDE Semiconductor | 30.80V; 1mA ;600W peak pulse power; glass passivated junction transient voltage suppressor (TVS) diode. For bipolar applications |
| MAX20-8.0 | MDE Semiconductor | 8.00V; 5.0A ;20000W peak pulse power; high current transient voltage suppressor (TVS) diode. For bipolar applications |
| P6KE39 | MDE Semiconductor | 33.30V; 1mA ;600W peak pulse power; glass passivated junction transient voltage suppressor (TVS) diode. For bipolar applications |
| 15KP24 | MDE Semiconductor | 24.0V; 5mA ;15000W peak pulse power; glass passivated junction transient voltage suppressor |
| SMDJ85A | MDE Semiconductor | 85.00V; 1mA ;3000W peak pulse power; surface mount transient transient voltage suppressor. For bipolar applications |
| SMAJ11A | MDE Semiconductor | 11.00V; 1mA ;400W peak pulse power; surface mount transient transient voltage suppressor. For bipolar applications |
| 30KW72A | MDE Semiconductor | 72.00V; 5mA ;15000W peak pulse power; glass passivated junction transient voltage suppressor. For bipolar applications |
| SMLJ75 | MDE Semiconductor | 75.00V; 1mA; 3000W peak pulse power; surface mount transient transient voltage suppressor. For bipolar applications |
| MAX40-36.0C | MDE Semiconductor | 36.00V; 5.0A ;40000W peak pulse power; high current transient voltage suppressor (TVS) diode. For bipolar applications |
| 1.5KE13 | MDE Semiconductor | 10.50V; 10mA ;1500W peak pulse power; glass passivated junction transient voltage suppressor for TVS modules and hybrid circuit applications |
| 30KW66 | MDE Semiconductor | 66.00V; 5mA ;15000W peak pulse power; glass passivated junction transient voltage suppressor. For bipolar applications |
| SMAJ78A | MDE Semiconductor | 78.00V; 1mA ;400W peak pulse power; surface mount transient transient voltage suppressor. For bipolar applications |
