| Μέρος αριθ | Κατασκευαστής | Εφαρμογή |
|---|
| BZT52-C6V8 | PanJit | Surface mount silicon zener diode. Power 410 mWatts. Nominal zener voltage 6.8 V @ Iz = 5 mA. |
| UF1001F | PanJit | Ultrafast switching rectifier. Max recurrent peak reverse voltage 100 V. Max average forward rectified current 10.0 A. |
| P4KE30C | PanJit | Glass passivated junction transient voltage suppressor. 400 Watt peak power. 1.0 Watt steady state. Vrwm = 24.30V, Vbr(min/max) = 27.00/33.00V, It = 1 mA. |
| SB650 | PanJit | Schottky barrier rectifier. Max recurrent peak reverse voltage 50 V. Max average forward rectified current at Ta = 75degC 6 A. |
| SA8.5A | PanJit | Glass passivated junction transient voltage suppressor. 500 Watt peak pulse power. Vrwm = 8.50V, Vbr(min/max) = 9.44/10.82V, It = 1 mA. |
| BZT52-C16 | PanJit | Surface mount silicon zener diode. Power 410 mWatts. Nominal zener voltage 16 V @ Iz = 5 mA. |
| UF108S | PanJit | Ultrafast switching rectifier. Peak reverse voltage 800 V. Average forward current 1.0 A. |
| TSP275C | PanJit | Axial lead bi-directional thyristor surge protector device. Rated repetitive peakoff-state voltage 275V. Breakover voltage 350V. On-state voltage 5V. Repetitive peakoff-state current 5uA Breakover current 800mA. |
| P4KE130CA | PanJit | Glass passivated junction transient voltage suppressor. 400 Watt peak power. 1.0 Watt steady state. Vrwm = 111.00V, Vbr(min/max) = 124.00/137.00V, It = 1 mA. |
| KBU8D | PanJit | Silicon single-phase bridge rectifier voltage. Max recurrent peak reverse voltage 200 V. Max average forward rectified output current at Tc = 100degC 8.0 A, at Ta = 40degC 8.0 A. |
| 3EZ160 | PanJit | Glass passivated junction silicon zener. Power 3.0 Watts. Vz = 160 V. Izt = 4.7 mA. |
| S2K | PanJit | Surfase mount rectifier. Max recurrent peak reverse voltage 800 V. Max average forward rectified current at Tl = 110degC 2.0 A. |
| SS18 | PanJit | Surfase mount schottky barrier rectifier. Max recurrent peak reverse voltage 80 V. Max average forward current 1.0 A. |
| BZT52-C36S | PanJit | Surface mount silicon zener diode. Power 200 mWatts. Nominal zener voltage 36 V |
| P6SMBJ210 | PanJit | Surfase mount transient voltage suppressor. 600W. Vrwm = 210 V. Vbr(min/max) = 231/296.1 V. It = 1.0 mA. Ir = 5 uA. Vc = 376 V. Ipp = 1.6 A. |
| 3.0SMCJ5.0A | PanJit | Surface mount transient voltage suppressor. Peak power pulse 3000 Watt. Vrwm = 5.0 V. Ir = 1000 uA @ Vrwm. |
| P4SMAJ6.0C | PanJit | Surfase mount transient voltage suppressor. Reverse stand-off voltage 6.0 V. Breakdown voltage(min/max) 6.67/8.45 V. Test current 10 mA. Reverse leakage 1600 uA. Max clamp voltage 11.4 V. Peak pulse current 35.1 A. |
| TSP320SB | PanJit | Surfase mount bi-directional thyristor surge protector device. Rated repetitive peakoff-state voltage 320V. Breakover voltage 400V. On-state voltage 5V. Repetitive peakoff-state current 5uA Breakover current 800mA. |
| MMBZ5256BW | PanJit | Surface mount silicon zener diode. Nominal zener voltage Vz = 30 V @ Izt. 200 mWatts zener diode. |
| 15KP210A | PanJit | Glass passivated junction transient voltage suppressor. Vrwm = 210 V. Vbr(min/max) = 231/296.1 V @ It = 1.0 mA. Ir = 5 uA. Vc = 340 V @ Ipp = 44 A. |
| 1N5949B | PanJit | Glass passivated junction silicon zener diode. Power 1.5Watts. Nominal zener voltage Vz @ Izt = 100V. Test current Izt = 3.7 mA. |
| 1.5SMCJ210C | PanJit | Surface mount transient voltage suppressor. 1500W peak power pulse. Vrmv = 210V; Vbr(min/max) = 231/296.1V @ It = 1.0mA; Ir(@ Vrwm) = 5uA; Vc = 376V, @ Ipp = 4.0A |
| P6SMBJ26 | PanJit | Surfase mount transient voltage suppressor. 600W. Vrwm = 26 V. Vbr(min/max) = 28.9/36.6 V. It = 1.0 mA. Ir = 5 uA. Vc = 46.6 V. Ipp = 12.4 A. |
| 15KP130C | PanJit | Glass passivated junction transient voltage suppressor. Vrwm = 130 V. Vbr(min/max) = 144/182.5 V @ It = 5.0 mA. Ir = 10 uA. Vc = 231 V @ Ipp = 65 A. |
| UF608 | PanJit | Ultrafast switching rectifier. Peak reverse voltage 800 V. Average forward current 6.0 A. |
| SA90 | PanJit | Glass passivated junction transient voltage suppressor. 500 Watt peak pulse power. Vrwm = 90.00V, Vbr(min/max) = 100.00/126.50V, It = 1 mA. |
| UF2B | PanJit | Surface mount ultrafast rectifier. Max recurrent peak reverse voltage 100 V. Max average forward rectified current 2.0 A. |
| SD1060YS | PanJit | DPak surfase mount schottky barrier rectifier. Max recurrent peak reverse voltage 60 V. Max average forward rectified current at Tc = 75degC 10.0 A. |
| SD1060CT | PanJit | Schottky barrier rectifier. Max recurrent peak reverse voltage 60 V. Max average forward rectified current at Tc = 75degC 10.0 A. |
| TSP220B | PanJit | Axial lead bi-directional thyristor surge protector device. Rated repetitive peakoff-state voltage 220V. Breakover voltage 300V. On-state voltage 5V. Repetitive peakoff-state current 5uA Breakover current 800mA. |
