| Μέρος αριθ | Κατασκευαστής | Εφαρμογή |
|---|
| BAV21W | PanJit | Surface mount switching diode. Power 350-410 mW. Reverse voltage 200 V. Max average forward current 200 mA. |
| 1.5SMCJ15CA | PanJit | Surfase mount transient voltage suppressor. 1500W peak power pulse. Vrwm = 15V; Vbr(min/max) = 16.7/19.2V @ It = 1.0mA; Ir(@ Vrwm) = 5uA; Vc = 24.4V @ Ipp = 61.5A |
| P4KE36CA | PanJit | Glass passivated junction transient voltage suppressor. 400 Watt peak power. 1.0 Watt steady state. Vrwm = 30.80V, Vbr(min/max) = 34.20/37.80V, It = 1 mA. |
| PG158R | PanJit | Glass passivated junction fast switching rectifier. Max recurrent peak reverse voltage 800 A. Average forward current. IO at 55degC, 3.8inches lead length 60 Hz, resistive or inductive load 1.5 A. |
| 1A3 | PanJit | Miniature plastic silicon rectifier. Max recurrent peak reverse voltage 200 V. Max average forward rectified current 1.0 A. |
| P4SMAJ5.0A | PanJit | Surfase mount transient voltage suppressor. Reverse stand-off voltage 5.0 V. Breakdown voltage(min/max) 6.40/7.55 V. Test current 10 mA. Reverse leakage 800 uA. Max clamp voltage 9.2 V. Peak pulse current 43.5 A. |
| P6KE100C | PanJit | Glass passivated junction transient voltage suppressor. 600 Watt peak power. 5.0 Watt steady state. Vrwm = 81.00V, Vbr(min/max) = 90.00/110.00V, It = 1 mA. |
| P4KE200CA | PanJit | Glass passivated junction transient voltage suppressor. 400 Watt peak power. 1.0 Watt steady state. Vrwm = 171.00V, Vbr(min/max) = 190.00/210.00V, It = 1 mA. |
| 3.0SMCJ200C | PanJit | Surface mount transient voltage suppressor. 3000 W peak power pulse. Vrwm = 200 V. Vbr(min/max) = 220/282.0.0V @ It. Ir = 5 uA @ Vrwm. Vc = 358 V @ Ipp = 8.4 A. |
| GL3506 | PanJit | In-line high current silicon bridge rectifier. Max recurrent peak reverse voltage 600 V. Max average forward current for resistive load at Tc=55degC 35 A. |
| 1.5SMCJ6.0CA | PanJit | 1500 W peak power pulse surfase mount transient voltage suppressor. Vrwm = 6.0V, Vbr(min/max) = 6.67/7.67V, @ It = 10mA; Ir = 2000uA (@ Vrwm); Vc = 10.3V @ Ipp = 145.6A. |
| CM5008 | PanJit | High current silicon bridge rectifier. Max recurrent peak reverse voltage 800V. Max average forward current 50.0A |
| SA170C | PanJit | Glass passivated junction transient voltage suppressor. 500 Watt peak pulse power. Vrwm = 170.00V, Vbr(min/max) = 189.00/239.50V, It = 1 mA. |
| P4KE10 | PanJit | Glass passivated junction transient voltage suppressor. 400 Watt peak power. 1.0 Watt steady state. Vrwm = 8.10V, Vbr(min/max) = 9.00/11.00V, It = 1mA. |
| P4KE33A | PanJit | Glass passivated junction transient voltage suppressor. 400 Watt peak power. 1.0 Watt steady state. Vrwm = 28.20V, Vbr(min/max) = 31.40/34.70V, It = 1mA. |
| 3.0SMCJ130 | PanJit | Surface mount transient voltage suppressor. 3000 W peak power pulse. Vrwm = 130 V. Vbr(min/max) = 144/182.5.0V @ It. Ir = 5 uA @ Vrwm. Vc = 231 V @ Ipp = 13.0 A. |
| SD530YS | PanJit | Surfase mount schottky barrier rectifier. Max recurrent peak reverse voltage 30 V. Max average forward rectified current at Tc = 75degC 5 A. |
| 1SMB2EZ200 | PanJit | Surface mount silicon zener diode. Nominal zener voltage Vz = 200.0 V. Test current Izt = 2.5 mA |
| CP2508 | PanJit | High current silicon bridge rectifier. Max recurrent peak reverse voltage 800V. Max average forward current for resistive load at Tc=55degC 25A. |
| SB840D | PanJit | DDPak surfase mount schottky barrier rectifier. Max recurrent peak reverse voltage 40 V. Max average forward rectified current at Tc = 100degC 8 A. |
| P4KE51 | PanJit | Glass passivated junction transient voltage suppressor. 400 Watt peak power. 1.0 Watt steady state. Vrwm = 41.30V, Vbr(min/max) = 45.90/56.10V, It = 1mA. |
| 1.5SMCJ64 | PanJit | Surface mount transient voltage suppressor. 1500W peak power pulse. Vrmv = 64V; Vbr(min/max) = 71.1/90.1V @ It = 1.0mA; Ir(@ Vrwm) = 5uA; Vc = 114V, @ Ipp = 13.2A |
| SD330T | PanJit | Surfase mount schottky barrier rectifier. Max recurrent peak reverse voltage 30 V. Max average forward rectified current at Tc = 75degC 3 A. |
| 3.0SMCJ40 | PanJit | Surface mount transient voltage suppressor. Peak power pulse 3000 W. Vrwm = 40 V. Vbr(max/min) = 44.4/56.3 V @ It = 1.0 mA. Ir = 5 uA @ Vrwm. Vc = 71.4 V @ Ipp = 42.0 A. |
| P600J | PanJit | High current plastic silicon rectifier. Max recurrent peak reverse voltage 600 A. Max average forward rectified current at Ta = 55degC 6.0 A. |
| UF2A | PanJit | Surface mount ultrafast rectifier. Max recurrent peak reverse voltage 50 V. Max average forward rectified current 2.0 A. |
| P6SMBJ24C | PanJit | Surfase mount transient voltage suppressor. 600W. Vrwm = 24 V. Vbr(min/max) = 26.7/33.8 V. It = 1.0 mA. Ir = 5 uA. Vc = 43.0 V. Ipp = 14.0 A. |
| 15KP26A | PanJit | Glass passivated junction transient voltage suppressor. Vrwm = 26 V. Vbr(min/max) = 28.9/33.2 V @ It = 5.0 mA. Ir = 200 uA. Vc = 42.1 V @ Ipp = 341 A. |
| PS200 | PanJit | Plastic silicon rectifier. Max recurrent peak reverse voltage 50 V. Max average forward rectified current 9.5mm lead length at Ta = 60degC 2.0 A. |
| FR2K | PanJit | Surface mount ultrafast rectifier. Max recurrent peak reverse voltage 800V. Max average forward rectified current 2.0 A. |
