| Μέρος αριθ | Κατασκευαστής | Εφαρμογή |
|---|
| P6SMBJ160A | PanJit | Surfase mount transient voltage suppressor. 600W. Vrwm = 160 V. Vbr(min/max) = 178/205.0 V. It = 1.0 mA. Ir = 5 uA. Vc = 259 V. Ipp = 2.3 A. |
| 15KP22 | PanJit | Glass passivated junction transient voltage suppressor. Vrwm = 22 V. Vbr(min/max) = 24.4/30.9 V @ It = 10 mA. Ir = 900 uA. Vc = 39.4 V @ Ipp = 365 A. |
| PS602R | PanJit | Fast switching plastic rectifier. Max recurrent peak reverse voltage 200 V. Max average forward rectified current at Ta = 55degC 6.0 A. |
| SD560T | PanJit | Surfase mount schottky barrier rectifier. Max recurrent peak reverse voltage 60 V. Max average forward rectified current at Tc = 75degC 5 A. |
| 15KP51C | PanJit | Glass passivated junction transient voltage suppressor. Vrwm = 51 V. Vbr(min/max) = 56.7/71.8 V @ It = 5.0 mA. Ir = 10 uA. Vc = 91.1 V @ Ipp = 164 A. |
| GBU8G | PanJit | Glass passivated single-phase bridge rectifier. Max recurrent peak reverse voltage 400 V. Max average forward rectified output current at Tc=100degC 8.0 A, at Ta=40degC 6.0 A. |
| SD880YT | PanJit | Surfase mount schottky barrier rectifier. Max recurrent peak reverse voltage 80 V. Max average forward rectified current at Tc = 85degC 8.0 A. |
| BZT52-C7V5S | PanJit | Surface mount silicon zener diode. Power 200 mWatts. Nominal zener voltage 7.5 V |
| 2EZ140 | PanJit | Glass passivated junction silicon zener diode. Power 2.0 Watts. Nominal zener voltage Vz = 140.0 V. Test current Izt = 3.6 mA. |
| P4SMAJ7.0CA | PanJit | Surfase mount transient voltage suppressor. Reverse stand-off voltage 7.0 V. Breakdown voltage(min/max) 7.78/8.95 V. Test current 10 mA. Reverse leakage 400 uA. Max clamp voltage 12.0 V. Peak pulse current 33.3 A. |
| 1SMC5384 | PanJit | Surface mount silicon zener diode. Power 5.0 Watts. Nominal zener voltage Vz = 160 V. Test current Izt = 8 mA. |
| 15KP48CA | PanJit | Glass passivated junction transient voltage suppressor. Vrwm = 48 V. Vbr(min/max) = 53.3/61.3 V @ It = 5.0 mA. Ir = 10 uA. Vc = 77.4 V @ Ipp = 193 A. |
| 2EZ180 | PanJit | Glass passivated junction silicon zener diode. Power 2.0 Watts. Nominal zener voltage Vz = 180.0 V. Test current Izt = 2.8 mA. |
| BAS20 | PanJit | Surface mount switching diode. Reverse voltage 150 V. Rectified current 200 mA. |
| 3.0SMCJ5.0CA | PanJit | Surface mount transient voltage suppressor. Peak power pulse 3000 Watt. Vrwm = 5.0 V. Ir = 2000 uA @ Vrwm. |
| P6KE110CA | PanJit | Glass passivated junction transient voltage suppressor. 600 Watt peak power. 5.0 Watt steady state. Vrwm = 94.00V, Vbr(min/max) = 105.00/116.00V, It = 1 mA. |
| P4KE30A | PanJit | Glass passivated junction transient voltage suppressor. 400 Watt peak power. 1.0 Watt steady state. Vrwm = 25.60V, Vbr(min/max) = 28.50/31.50V, It = 1mA. |
| 1SMC5367 | PanJit | Surface mount silicon zener diode. Power 5.0 Watts. Nominal zener voltage Vz = 43 V. Test current Izt = 30 mA. |
| 1N4148W | PanJit | Surface mount switching diode. Peak reverse voltage 100V. Maximum average forward current at Ta = 25degC.150mA |
| 1.5SMCJ200C | PanJit | Surface mount transient voltage suppressor. 1500W peak power pulse. Vrmv = 200V; Vbr(min/max) = 220/282.0V @ It = 1.0mA; Ir(@ Vrwm) = 5uA; Vc = 358V, @ Ipp = 4.1A |
| TSP065A | PanJit | Axial lead bi-directional thyristor surge protector device. Rated repetitive peakoff-state voltage 65V. Breakover voltage 88V. On-state voltage 5V. Repetitive peakoff-state current 5uA Breakover current 800mA. |
| P4SMAJ24C | PanJit | Surfase mount transient voltage suppressor. Reverse stand-off voltage 24 V. Breakdown voltage(min/max) 26.7/33.8 V. Test current 1.0 mA. Reverse leakage 5 uA. Max clamp voltage 43.0 V. Peak pulse current 9.3 A. |
| P6KE6.8 | PanJit | Glass passivated junction transient voltage suppressor. 600 Watt peak power. 5.0 Watt steady state. Vrwm = 5.50V, Vbr(min/max) = 6.12/7.48V, It = 10 mA. |
| P4SMAJ120 | PanJit | Surfase mount transient voltage suppressor. 400W. Reverse stand-off voltage 120 V. Breakdown voltage(min/max) 133/169.0 V. Test current 1.0 mA. Reverse leakage 5 uA. Max clamp voltage 214 V. Peak pulse current 1.9 A. |
| 1N5391 | PanJit | Plastic silicon rectifier. Max reccurent peak reverse voltage 50V. Max average forward rectified current 1.5A. |
| GBU6A | PanJit | Glass passivated single-phase bridge rectifier. Max recurrent peak reverse voltage 50 V. Max average forward rectified output current at Tc=100degC 6.0 A. |
| GBU8J | PanJit | Glass passivated single-phase bridge rectifier. Max recurrent peak reverse voltage 600 V. Max average forward rectified output current at Tc=100degC 8.0 A, at Ta=40degC 6.0 A. |
| SD1080S | PanJit | DPak surfase mount schottky barrier rectifier. Max recurrent peak reverse voltage 80 V. Max average forward rectified current at Tc = 75degC 10.0 A. |
| SB1650DC | PanJit | DDPak surfase mount schottky barrier rectifier. Max recurrent peak reverse voltage 50 V. Max average forward rectified current at Tc = 90degC 16.0 A. |
| SA130C | PanJit | Glass passivated junction transient voltage suppressor. 500 Watt peak pulse power. Vrwm = 130.00V, Vbr(min/max) = 144.00/182.50V, It = 1 mA. |
