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PHW10N60E spec: 600 V, power MOS transistor avalanche energy rated
PHW10N60E Παρόμοια
- PHW10N40E
- 400 V, power MOS transistor avalanche energy rated
- PHW10N60E
- 600 V, power MOS transistor avalanche energy rated
- PHW10N60E
- 600 V, power MOS transistor avalanche energy rated
- PHW11N50E
- PowerMOS transistor. Avalancne energy rated.
- PHW11N50E
- 500 V, power MOS transistor avalanche energy rated
- PHW11N50E
- 500 V, power MOS transistor avalanche energy rated
- PHW13N40E
- PowerMOS transistor. Avalanche energy rated.
- PHW14N50E
- PowerMOS transistor. Avalanche energy rated.
PHW10N60E Datasheet και Spec
Κατασκευαστής : Philips
Πακετάρισμα : SOT
Pins : 3
Θερμοκρασία : Min -55 °C | Max 150 °C
Μέγεθος : 126 KB
Εφαρμογή : 600 V, power MOS transistor avalanche energy rated
PHW10N60E PDF Κατεβάστε