Path:OKDatasheet > Semiconductor δελτίο > Philips Datasheet > PHW11N50E
PHW11N50E spec: PowerMOS transistor. Avalancne energy rated.
PHW11N50E Παρόμοια
- PHW10N40E
- 400 V, power MOS transistor avalanche energy rated
- PHW10N60E
- 600 V, power MOS transistor avalanche energy rated
- PHW10N60E
- 600 V, power MOS transistor avalanche energy rated
- PHW11N50E
- PowerMOS transistor. Avalancne energy rated.
- PHW11N50E
- 500 V, power MOS transistor avalanche energy rated
- PHW11N50E
- 500 V, power MOS transistor avalanche energy rated
- PHW13N40E
- PowerMOS transistor. Avalanche energy rated.
- PHW14N50E
- PowerMOS transistor. Avalanche energy rated.
PHW11N50E Datasheet και Spec
Κατασκευαστής : Philips
Πακετάρισμα : SOT429
Pins : 3
Θερμοκρασία : Min -55 °C | Max 150 °C
Μέγεθος : 45 KB
Εφαρμογή : PowerMOS transistor. Avalancne energy rated.
PHW11N50E PDF Κατεβάστε