| Μέρος αριθ | Κατασκευαστής | Εφαρμογή |
|---|
| 110RKI80S90 | IR | Phase control thyristor |
| IRHF9130 | IR | HEXFET transistor |
| SD500N30MSC | IR | Standard recovery diode |
| ST103S08PFN1L | IR | Inverter grade thyristor |
| ST223C04CHK2 | IR | Inverter grade thyristor |
| IRG4PC40 | IR | Insulated gate bipolar transistor. VCES = 600V, VCE(on)typ. = 1.50V @ VGE = 15V, IC = 27A |
| IRF5Y5305CM | IR | HEXFET power MOSFET thru-hole. BVDSS = -55V, RDS(on) = 0.065 Ohm, ID = -18A |
| SD203R12S20MSC | IR | Fast recovery diode |
| ST700C12L0 | IR | Phase control thyristor |
| 301UA120P2 | IR | Standard recovery diode |
| IR2127S | IR | Current limiting single channel driver |
| ST300C20C3 | IR | Phase control thyristor |
| SD600N28PSC | IR | Standard recovery diode |
| IRF440 | IR | HEXFET transistor thru-hole MOSFET. BVDSS = 500V, RDS(on) = 0.85 Ohm, ID = 8.0A |
| SD103R08S20PC | IR | Fast recovery diode |
| IRF1407L | IR | HEXFET power MOSFET. VDSS = 75V, RDS(on) = 0.0078 Ohm, ID = 100A. |
| IRG4PC30KD | IR | Insulated gate bipolar transistor with ultrafast soft recovery diode. VCES = 600V, VCE(on)typ. = 2.21V @ VGE = 15V, IC = 16A |
| SD150R20PC | IR | Standard recovery diode |
| IRFU3303 | IR | HEXFET power MOSFET. VDSS = 30V, RDS(on) = 0.031 Ohm, ID = 33A |
| ST303C12HK3L | IR | Inverter grade thyristor |
| SD253N16S15PSV | IR | Fast recovery diode |
| ST330C14C3 | IR | Phase control thyristor |
| IRF3709L | IR | HEXFET power MOSFET. VDSS = 30V, RDS(on) = 9.0 mOhm, ID = 90A |
| ST1200C14K1 | IR | Phase control thyristor |
| ST330S04P1L | IR | Phase control thyristor |
| SD253R08S15MBV | IR | Fast recovery diode |
| SD153N12S10MV | IR | Fast recovery diode |
| SD253R10S15MV | IR | Fast recovery diode |
| IRF1104 | IR | HEXFET power MOSFET. VDSS = 40V, RDS(on) = 0.009 Ohm, ID = 100A. |
| IRHM7C50SE | IR | HEXFET transistor |
