Path:okDatasheet > Semiconductor δελτίο > IR Datasheet > IR-7
S30MC IRGPH30S 72U120PD SD453N12S20MC ST183S08MFN0 SD253N10S20MV ST330C14L0L SD153R16S10MV SD453R16S20MC IRGPC30M IRFS23N15D IRFI830G IRHM2C50SE 20CJQ100 SD453N25S30MSC ST083S08PFK0L ST173S10PFK0 SD150N16PV IRGPC40FD2 SD40OC12C ST3230C14R2L ST330C12C0L ST180C08C0 ST303C10LHK1 ST1
Μέρος αριθ | Κατασκευαστής | Εφαρμογή |
---|---|---|
ST2600C28R0 | IR | Phase control thyristor |
SD453N20S30MC | IR | Fast recovery diode |
IRGPH30S | IR | Insulated gate bipolar transistor |
72U120PD | IR | Standard recovery diode |
SD453N12S20MC | IR | Fast recovery diode |
ST183S08MFN0 | IR | Inverter grade thyristor |
SD253N10S20MV | IR | Fast recovery diode |
ST330C14L0L | IR | Phase control thyristor |
SD153R16S10MV | IR | Fast recovery diode |
SD453R16S20MC | IR | Fast recovery diode |
IRGPC30M | IR | Insulated gate bipolar transistor |
IRFS23N15D | IR | HEXFET power MOSFET. VDSS = 150V, RDS(on) = 0.090 Ohm, ID = 23A |
IRFI830G | IR | HEXFET power MOSFET. VDSS = 500V, RDS(on) = 1.5 Ohm, ID = 3.1 A |
IRHM2C50SE | IR | HEXFET transistor |
20CJQ100 | IR | Schottky rectifier |
SD453N25S30MSC | IR | Fast recovery diode |
ST083S08PFK0L | IR | Inverter grade thyristor |
ST173S10PFK0 | IR | Inverter grade thyristor |
SD150N16PV | IR | Standard recovery diode |
IRGPC40FD2 | IR | Insulated gate bipolar transistor with ultrafast soft recovery diode |
SD40OC12C | IR | Standard recovery diode |
ST3230C14R2L | IR | Phase control thyristor |
ST330C12C0L | IR | Phase control thyristor |
ST180C08C0 | IR | Phase control thyristor |
ST303C10LHK1 | IR | Inverter grade thyristor |
ST1200C12K3 | IR | Phase control thyristor |
SD203N20S15PBC | IR | Fast recovery diode |
SD253R12S15PBV | IR | Fast recovery diode |
IRF7470 | IR | HEXFET power MOSFET. VDSS = 40V, RDS(on) = 13mOhm, ID = 10A |
SD253N16S20MBV | IR | Fast recovery diode |