Path:okDatasheet > Semiconductor δελτίο > IR Datasheet > IR-4
N16PTC 309U160P2 SD600N16MTC SD103N20S20MBC ST330S08M3L SD150R20MSC SD303C12S15C IR2110E6 ST280CH06C1 ST3230C10R3L IRFU420 ST180C12C0L ST730C08L3L 300HF120P IRF1902 SD253R16S20PSV SD103R12S20PBC SD600N04PC SD500R30PTC SD403C10S10C SD500R45PSC SD253R10S15MSV 305UA80P5 309URA80 SD6
Μέρος αριθ | Κατασκευαστής | Εφαρμογή |
---|---|---|
SD253N14S15MBV | IR | Fast recovery diode |
SD600N16PTC | IR | Standard recovery diode |
309U160P2 | IR | Standard recovery diode |
SD600N16MTC | IR | Standard recovery diode |
SD103N20S20MBC | IR | Fast recovery diode |
ST330S08M3L | IR | Phase control thyristor |
SD150R20MSC | IR | Standard recovery diode |
SD303C12S15C | IR | Fast recovery diode |
IR2110E6 | IR | High and low side driver |
ST280CH06C1 | IR | Phase control thyristor |
ST3230C10R3L | IR | Phase control thyristor |
IRFU420 | IR | "HEXFET power MOSFET. VDSS = 500V, RDS(on) = 3.0 Ohm, ID = 2.4A" |
ST180C12C0L | IR | Phase control thyristor |
ST730C08L3L | IR | Phase control thyristor |
300HF120P | IR | Standard recovery diode |
IRF1902 | IR | "HEXFET power MOSFET. VDSS = 20V, RDS(on) = 85 mOhm, ID = 4.0A @ VGS=4.5V, RDS(on) = 170 mOhm, ID = 3,2A @ VGS=2.7V" |
SD253R16S20PSV | IR | Fast recovery diode |
SD103R12S20PBC | IR | Fast recovery diode |
SD600N04PC | IR | Standard recovery diode |
SD500R30PTC | IR | Standard recovery diode |
SD403C10S10C | IR | Fast recovery diode |
SD500R45PSC | IR | Standard recovery diode |
SD253R10S15MSV | IR | Fast recovery diode |
305UA80P5 | IR | Standard recovery diode |
309URA80 | IR | Standard recovery diode |
SD600R32MC | IR | Standard recovery diode |
IRFRC20 | IR | "HEXFET power MOSFET. VDSS = 600V, RDS(on) = 4.4 Ohm, ID = 2.0A" |
IRF7452 | IR | "HEXFET power MOSFET. VDSS = 100V, RDS(on) = 0.060 Ohm. ID = 4.5A" |
70UR10 | IR | Standard recovery diode |
SD103R04S20PSC | IR | Fast recovery diode |