IR Datasheets Κατάλογος-6
| Μέρος αριθ | Κατασκευαστής | Εφαρμογή |
|---|---|---|
| IRF7457 | IR | HEXFET power MOSFET. VDSS = 20V, RDS(on) = 7.0 mOhm,, ID = 15A |
| IRU1206-33CD | IR | 1A very low dropout positive fixed 3.3V regulator |
| ST173S10PFK2L | IR | Inverter grade thyristor |
| 307UA250P5 | IR | Standard recovery diode |
| ST223C04CHK0 | IR | Inverter grade thyristor |
| SD103N04S10PBC | IR | Fast recovery diode |
| SD103R14S20MSC | IR | Fast recovery diode |
| IRU1010-25CS | IR | 1A low dropout positive fixed 2.5V regulator |
| SD203N10S20PSC | IR | Fast recovery diode |
| SD30OC32C | IR | Standard recovery diode |
| 300UR40A | IR | Standard recovery diode |
| IRGBC30S | IR | Insulated gate bipolar transistor |
| ST380CH04C3L | IR | Phase control thyristor |
| 305U200 | IR | Standard recovery diode |
| ST230C08C3L | IR | Phase control thyristor |
| 301UA200 | IR | Standard recovery diode |
| SD103N14S15MC | IR | Fast recovery diode |
| ST330S14P0L | IR | Phase control thyristor |
| IRF9Z14 | IR | HEXFET power MOSFET. VDSS = -60V, RDS(on) = 0.50 Ohm, ID = -6.7A |
| 70U160APD | IR | Standard recovery diode |
| IRFU5410 | IR | HEXFET power MOSFET. VDSS = -100V, RDS(on) = 0.205 Ohm, ID = -13A |
| IRG4BC20SD | IR | Insulated gate bipolar transistor with ultrafast soft recovery diode. VCES = 600V, VCE(on)typ. = 1.4V @ VGE = 15V, IC = 10A |
| JANTXV2N6768 | IR | HEXFET power mosfet |
| ST2100C36R1 | IR | Phase control thyristor |
| ST303C12LHK2 | IR | Inverter grade thyristor |
| IRU1015CT | IR | 1.5A low dropout positive adjustable regulator |
| SD253R12S15PV | IR | Fast recovery diode |
| SD203N08S15PBC | IR | Fast recovery diode |
| SD103R20S15PSC | IR | Fast recovery diode |
| ST1230C14K2 | IR | Phase control thyristor |