| Μέρος αριθ | Κατασκευαστής | Εφαρμογή |
|---|
| IRG4PH50S | IR | Insulated gate bipolar transistor. VCES = 1200V, VCE(on)typ. = 1.47V @ VGE = 15V, IC = 33A |
| ST303C04LHK3 | IR | Inverter grade thyristor |
| ST183S08PFN0 | IR | Inverter grade thyristor |
| IRFP3703 | IR | HEXFET power MOSFET. VDSS = 30 V, RDS(on) = 0.0028 Ohm, ID = 210 A |
| IRF2807 | IR | Power MOSFET, 75V, 82A |
| SD103N16S20PBV | IR | Fast recovery diode |
| 307URA200P2 | IR | Standard recovery diode |
| ST223C08CHK1L | IR | Inverter grade thyristor |
| ST303S08PFN1L | IR | Inverter grade thyristor |
| ST230S12P1VL | IR | Phase control thyristor |
| SD600N28MSC | IR | Standard recovery diode |
| SD253R16S15PBV | IR | Fast recovery diode |
| SD203N10S15PSC | IR | Fast recovery diode |
| ST330S12P1L | IR | Phase control thyristor |
| 200HFR40PSV | IR | Standard recovery diode |
| SD103R10S10PC | IR | Fast recovery diode |
| 70U40 | IR | Standard recovery diode |
| ST180C04C3L | IR | Phase control thyristor |
| ST2100C36R1L | IR | Phase control thyristor |
| SD253R16S20PBV | IR | Fast recovery diode |
| ST110S08P1L | IR | Phase control thyristor |
| SD500R36MSC | IR | Standard recovery diode |
| SD203R12S15MBC | IR | Fast recovery diode |
| SD300R20MSC | IR | Standard recovery diode |
| SD103N10S20PSC | IR | Fast recovery diode |
| IRLZ14L | IR | Power MOSFET for fast switching applications, 60V, 10A |
| IRF7524D1 | IR | FETKY MOSFET and schottky diode. VDSS = -20V, RDS(on) = 0.27 Ohm, schottky Vf = 039V. |
| SD253R14S20PSV | IR | Fast recovery diode |
| ST1900C48R3 | IR | Phase control thyristor |
| ST183C08CHK1 | IR | Inverter grade thyristor |
