Path:okDatasheet > Semiconductor δελτίο > IR Datasheet > IR-46
0PBC ST083S08PFK2L 307UA160 SD203R04S20MSC 302UR120YPD ST330C14L1L ST280C06C1L IRU1117-33CS ST180S04M0 SD103N12S10MBC ST380CH06C1 200HF120MBV ST303C12CHK2 307U200P2 SD400R12MC IRFU9014 ST203C12CHH0L ST333C04CHK0L IRU1010-25CP ST730C18L2 IRF7663 SD453R25S30PSC IRF3315L SD203N16S10
Μέρος αριθ | Κατασκευαστής | Εφαρμογή |
---|---|---|
IRG4BC20SD-S | IR | Insulated gate bipolar transistor with ultrafast soft recovery diode. VCES = 600V, VCE(on)typ. = 1.4V @ VGE = 15V, IC = 10A |
SD150N20PBC | IR | Standard recovery diode |
ST083S08PFK2L | IR | Inverter grade thyristor |
307UA160 | IR | Standard recovery diode |
SD203R04S20MSC | IR | Fast recovery diode |
302UR120YPD | IR | Standard recovery diode |
ST330C14L1L | IR | Phase control thyristor |
ST280C06C1L | IR | Phase control thyristor |
IRU1117-33CS | IR | 800mA low dropout positive fixed 3.3V regulator |
ST180S04M0 | IR | Phase control thyristor |
SD103N12S10MBC | IR | Fast recovery diode |
ST380CH06C1 | IR | Phase control thyristor |
200HF120MBV | IR | Standard recovery diode |
ST303C12CHK2 | IR | Inverter grade thyristor |
307U200P2 | IR | Standard recovery diode |
SD400R12MC | IR | Standard recovery diode |
IRFU9014 | IR | HEXFET power MOSFET. VDSS = -60V, RDS(on) = 0.50 Ohm, ID = -5.1A |
ST203C12CHH0L | IR | Inverter grade thyristor |
ST333C04CHK0L | IR | Inverter grade thyristor |
IRU1010-25CP | IR | 1A low dropout positive fixed 2.5V regulator |
ST730C18L2 | IR | Phase control thyristor |
IRF7663 | IR | HEXFET power MOSFET. VDSS = -20V, RDS(on) = 0.020 Ohm. |
SD453R25S30PSC | IR | Fast recovery diode |
IRF3315L | IR | HEXFET power MOSFET. VDSS = 150V, RDS(on) = 0.082 Ohm, ID = 21A |
SD203N16S10MSV | IR | Fast recovery diode |
301UA120P4 | IR | Standard recovery diode |
300HFR40P | IR | Standard recovery diode |
SD300N16MV | IR | Standard recovery diode |
ST180C16C3 | IR | Phase control thyristor |
72UF80A | IR | Standard recovery diode |