| Μέρος αριθ | Κατασκευαστής | Εφαρμογή |
|---|
| SD300N16MV | IR | Standard recovery diode |
| ST330C08C0 | IR | Phase control thyristor |
| ST180C16C3 | IR | Phase control thyristor |
| SD300N20MBC | IR | Standard recovery diode |
| SD203R12S10PC | IR | Fast recovery diode |
| SD203R10S20MSC | IR | Fast recovery diode |
| ST333C04LHK3L | IR | Inverter grade thyristor |
| IRGBC40F | IR | Insulated gate bipolar transistor |
| SD253N12S20MBV | IR | Fast recovery diode |
| SD600N08MTC | IR | Standard recovery diode |
| IRF634S | IR | Power MOSFET, 250V, 8.1A |
| ST110S04P1L | IR | Phase control thyristor |
| SD400R16PV | IR | Standard recovery diode |
| SD103N25S10MSC | IR | Fast recovery diode |
| 307UA200P5 | IR | Standard recovery diode |
| SD203R20S15MC | IR | Fast recovery diode |
| IRFI9640G | IR | HEXFET power MOSFET. VDSS = -200V, RDS(on) = 0.50 Ohm, ID = -6.1 A |
| IRFIZ34V | IR | HEXFET power MOSFET. VDSS = 60V, RDS(on) = 28mOhm, ID = 20A |
| SD200R25MC | IR | Standard recovery diode |
| SD233N30S50MTC | IR | Fast recovery diode |
| IRFPE40 | IR | HEXFET power MOSFET. VDSS = 800 V, RDS(on) = 2.0 Ohm, ID = 5.4 A |
| IRF9520N | IR | HEXFET power MOSFET. VDSS = -100V, RDS(on) = 0.48 Ohm, ID = -6.8A |
| 302U10A | IR | Standard recovery diode |
| 307UR160P2 | IR | Standard recovery diode |
| IRFY044CM | IR | HEXFET power mosfet |
| SD200N24PBC | IR | Standard recovery diode |
| ST380CH04C2L | IR | Phase control thyristor |
| ST730C14L0 | IR | Phase control thyristor |
| ST223C08CHK3L | IR | Inverter grade thyristor |
| 309U120 | IR | Standard recovery diode |
