| Μέρος αριθ | Κατασκευαστής | Εφαρμογή |
|---|
| PG606R | PanJit | Glass passivated junction fast switching rectifier. Max recurrent peak reverse voltage 600 A. Max average forward rectified current at Ta = 60degC 6.0 A. |
| P4SMAJ100 | PanJit | Surfase mount transient voltage suppressor. 400W. Reverse stand-off voltage 100 V. Breakdown voltage(min/max) 111/141.0 V. Test current 1.0 mA. Reverse leakage 5 uA. Max clamp voltage 179 V. Peak pulse current 2.2 A. |
| SD640CS | PanJit | DPak surfase mount schottky barrier rectifier. Max recurrent peak reverse voltage 40 V. Max average forward rectified current at Tc = 75degC 6.0 A. |
| P4SMAJ17A | PanJit | Surfase mount transient voltage suppressor. Reverse stand-off voltage 17 V. Breakdown voltage(min/max) 18.9/21.7 V. Test current 1.0 mA. Reverse leakage 5 uA. Max clamp voltage 27.6 V. Peak pulse current 14.5 A. |
| MMSZ5239B | PanJit | Surface mount silicon zener diode. Nominal zener voltage Vz = 9.1 V @ Izt. 500 mWatts zener diode. |
| 15KP200 | PanJit | Glass passivated junction transient voltage suppressor. Vrwm = 200 V. Vbr(min/max) = 220/282.0 V @ It = 1.0 mA. Ir = 5 uA. Vc = 358 V @ Ipp = 42 A. |
| P6KE440 | PanJit | Glass passivated junction transient voltage suppressor. 600 Watt peak power. 5.0 Watt steady state. Vrwm = 356.00V, Vbr(min/max) = 396.00/484.00V, It = 1 mA. |
| SA60CA | PanJit | Glass passivated junction transient voltage suppressor. 500 Watt peak pulse power. Vrwm = 60.00V, Vbr(min/max) = 66.70/76.70V, It = 1 mA. |
| 1N4006S | PanJit | Plastic silicon rectifier. Max recurrent peak reverse voltage 800 V. Max average forward rectified current 1.0 A. |
| 1SMB2EZ68 | PanJit | Surface mount silicon zener diode. Nominal zener voltage Vz = 68.0 V. Test current Izt = 7.4 mA |
| 3.0SMCJ100CA | PanJit | Surface mount transient voltage suppressor. 3000 W peak power pulse. Vrwm = 100 V. Vbr(min/max) = 111/128.0 V @ It. Ir = 5 uA @ Vrwm. Vc = 162 V @ Ipp = 18.6 A. |
| 3KP17A | PanJit | Glass passivated junction transient voltage suppressor. 3000 W peak pulse power. Vrwm = 17.00 V. Vbr = 18.90 V (min), 21.70 V (max). It = 1 mA. |
| 1N4003S | PanJit | Plastic silicon rectifier. Max recurrent peak reverse voltage 200 V. Max average forward rectified current 1.0 A. |
| 1N5362B | PanJit | Glass passivated junction silicon zener diode. Power 5.0 Watt. Vz @ Izt = 28V, Izt = 50mA |
| ER800 | PanJit | Superfast recovery rectifier. Max recurrent peak reverse voltage 50V. Max average forward rectified current 8.0 A. |
| 3KP10 | PanJit | Glass passivated junction transient voltage suppressor. 3000 W peak pulse power. Vrwm = 10.00 V. Vbr = 11.10 V (min), 14.10 V (max). It = 1 mA. |
| UF150G | PanJit | Glass passivated junction ultrafast switching rectifier. Peak reverse voltage 50 V. Average forward current 1.5 A. |
| PG5392 | PanJit | Glass passivated junction plastic rectifier. Max recurrent peak reverse voltage 100 A. Max average forward rectified current 0.375inches lead length at Ta = 55degC 1.5 A.. |
| SD560YT | PanJit | Surfase mount schottky barrier rectifier. Max recurrent peak reverse voltage 60 V. Max average forward rectified current at Tc = 75degC 5 A. |
| 3KP120A | PanJit | Glass passivated junction transient voltage suppressor. 3000 W peak pulse power. Vrwm = 120.00 V. Vbr = 133.00 V (min), 153.00 V (max). It = 1 mA. |
| P4SMAJ8.5C | PanJit | Surfase mount transient voltage suppressor. Reverse stand-off voltage 8.5 V. Breakdown voltage(min/max) 9.44/11.92 V. Test current 1.0 mA. Reverse leakage 20 uA. Max clamp voltage 15.9 V. Peak pulse current 25.1 A. |
| 1SMB2EZ13 | PanJit | Surface mount silicon zener diode. Nominal zener voltage Vz = 13.0 V. Test current Izt = 38.5 mA |
| CP3504 | PanJit | High current silicon bridge rectifier. Max recurrent peak reverse voltage 400V. Max average forward current for resistive load at Tc=55degC 35A. |
| 1.5SMCJ18 | PanJit | Surfase mount transient voltage suppressor. 1500W peak power pulse. Vrwm = 18V; Vbr(min/max) = 20.0/25.3V @ It = 1.0mA; Ir(@ Vrwm) = 5uA; Vc = 32.2V @ Ipp = 46.6A |
| P6KE440C | PanJit | Glass passivated junction transient voltage suppressor. 600 Watt peak power. 5.0 Watt steady state. Vrwm = 356.00V, Vbr(min/max) = 396.00/484.00V, It = 1 mA. |
| 1SMB3EZ47 | PanJit | Surface mount silicon zener diode. Power 3.0 Watts. Nominal zener voltage Vz = 47 V. Test current Izt = 16 mA |
| 15KP28A | PanJit | Glass passivated junction transient voltage suppressor. Vrwm = 28 V. Vbr(min/max) = 31.1/35.8 V @ It = 5.0 mA. Ir = 125 uA. Vc = 45.4 V @ Ipp = 316 A. |
| SA24C | PanJit | Glass passivated junction transient voltage suppressor. 500 Watt peak pulse power. Vrwm = 24.00V, Vbr(min/max) = 26.70/33.80V, It = 1 mA. |
| P6SMBJ8.5A | PanJit | Surfase mount transient voltage suppressor. 600W. Vrwm = 8.5 V. Vbr(min/max) = 9.44/10.82 V. It = 1.0 mA. Ir = 10 uA. Vc = 14.4 V. Ipp = 41.7 A. |
| PG150 | PanJit | Glass passivated junction plastic rectifier. Max recurrent peak reverse voltage 50 A. Max average forward rectified current 9.5mm lead length at Ta = 55degC 1.5 A. |
