Path:okDatasheet > Semiconductor δελτίο > PanJit Datasheet > PanJit-62
AJ30 ED802CS P4KE82C 1N5382B ED602CT PS101RS SA30A PS1510 SD820CS P6SMBJ8.0A P6KE33C MMSZ5256BS P4SMAJ15CA 1N5364B SB620FCT 1SMB2EZ170 P4SMAJ150CA SA160A P4SMAJ200C UF2G 1SMC5363 15KP45C BZT52-C36 PS2010 CP1504 15KP24CA 3EZ27 UF1601FCT
Μέρος αριθ | Κατασκευαστής | Εφαρμογή |
---|---|---|
PG151R | PanJit | Glass passivated junction fast switching rectifier. Max recurrent peak reverse voltage 100 A. Average forward current. IO at 55degC, 3.8inches lead length 60 Hz, resistive or inductive load 1.5 A. |
TSP075SB | PanJit | Surfase mount bi-directional thyristor surge protector device. Rated repetitive peakoff-state voltage 75V. Breakover voltage 98V. On-state voltage 5V. Repetitive peakoff-state current 5uA Breakover current 800mA. |
P4SMAJ30 | PanJit | Surfase mount transient voltage suppressor. Reverse stand-off voltage 30 V. Breakdown voltage(min/max) 33.3/42.2 V. Test current 1.0 mA. Reverse leakage 5 uA. Max clamp voltage 53.5 V. Peak pulse current 7.5 A. |
ED802CS | PanJit | DPAK surfase mount super fast recovery rectifier. Max recurrent peak reverse voltage 200V. Max average forward rectified current (Tc=75degC) 8.0A. |
P4KE82C | PanJit | Glass passivated junction transient voltage suppressor. 400 Watt peak power. 1.0 Watt steady state. Vrwm = 66.40V, Vbr(min/max) = 73.80/90.20V, It = 1 mA. |
1N5382B | PanJit | Glass passivated junction silicon zener diode. Power 5.0 Watt. Vz @ Izt = 140V, Izt = 8.0mA |
ED602CT | PanJit | Super fast recovery rectifier. Max recurrent peak reverse voltage 200V. Max average forward rectified current (Tc=75degC) 6.0A. |
PS101RS | PanJit | Fast switching plastic diode. Max recurrent peak reverse voltage 100 V. Max average forward rectified current 9.5mm lead length at Ta = 55degC 1.0 A. |
SA30A | PanJit | Glass passivated junction transient voltage suppressor. 500 Watt peak pulse power. Vrwm = 30.00V, Vbr(min/max) = 33.30/38.30V, It = 1 mA. |
PS1510 | PanJit | Plastic silicon rectifier. Max recurrent peak reverse voltage 1000 V. Max average forward rectified current 9.5mm lead length at Ta = 60degC 1.5 A. |
SD820CS | PanJit | Surfase mount schottky barrier rectifier. Max recurrent peak reverse voltage 20 V. Max average forward rectified current at Tc = 85degC 8.0 A. |
P6SMBJ8.0A | PanJit | Surfase mount transient voltage suppressor. 600W. Vrwm = 8.0 V. Vbr(min/max) = 8.89/10.23 V. It = 1.0 mA. Ir = 50 uA. Vc = 13.6 V. Ipp = 44.1 A. |
P6KE33C | PanJit | Glass passivated junction transient voltage suppressor. 600 Watt peak power. 5.0 Watt steady state. Vrwm = 26.80V, Vbr(min/max) = 29.70/36.30V, It = 1 mA. |
MMSZ5256BS | PanJit | Surface mount silicon zener diode. Nominal zener voltage Vz = 30 V @ Izt. 200 mWatts zener diode. |
P4SMAJ15CA | PanJit | Surfase mount transient voltage suppressor. Reverse stand-off voltage 15 V. Breakdown voltage(min/max) 16.7/19.2 V. Test current 1.0 mA. Reverse leakage 5 uA. Max clamp voltage 24.4 V. Peak pulse current 16.4 A. |
1N5364B | PanJit | Glass passivated junction silicon zener diode. Power 5.0 Watt. Vz @ Izt = 33V, Izt = 40mA |
SB620FCT | PanJit | Isolation schottky barrier rectifier. Max recurrent peak reverse voltage 20 V. Max average forward rectified current at Tc = 75degC 6 A. |
1SMB2EZ170 | PanJit | Surface mount silicon zener diode. Nominal zener voltage Vz = 170.0 V. Test current Izt = 2.9 mA |
P4SMAJ150CA | PanJit | Surfase mount transient voltage suppressor. 400W. Reverse stand-off voltage 150 V. Breakdown voltage(min/max) 167/192.5 V. Test current 1.0 mA. Reverse leakage 5 uA. Max clamp voltage 243 V. Peak pulse current 1.6 A. |
SA160A | PanJit | Glass passivated junction transient voltage suppressor. 500 Watt peak pulse power. Vrwm = 160.00V, Vbr(min/max) = 178.00/205.00V, It = 1 mA. |
P4SMAJ200C | PanJit | Surfase mount transient voltage suppressor. 400W. Reverse stand-off voltage 200 V. Breakdown voltage(min/max) 220/282.0 V. Test current 1.0 mA. Reverse leakage 5 uA. Max clamp voltage 358 V. Peak pulse current 1.1 A. |
UF2G | PanJit | Surface mount ultrafast rectifier. Max recurrent peak reverse voltage 400 V. Max average forward rectified current 2.0 A. |
1SMC5363 | PanJit | Surface mount silicon zener diode. Power 5.0 Watts. Nominal zener voltage Vz = 30 V. Test current Izt = 40 mA. |
15KP45C | PanJit | Glass passivated junction transient voltage suppressor. Vrwm = 45 V. Vbr(min/max) = 50.0/63.3 V @ It = 5.0 mA. Ir = 10 uA. Vc = 80.3 V @ Ipp = 186 A. |
BZT52-C36 | PanJit | Surface mount silicon zener diode. Power 410 mWatts. Nominal zener voltage 36 V @ Iz = 5 mA. |
PS2010 | PanJit | Plastic silicon rectifier. Max recurrent peak reverse voltage 1000 V. Max average forward rectified current 9.5mm lead length at Ta = 60degC 2.0 A. |
CP1504 | PanJit | High current silicon bridge rectifier. Max recurrent peak reverse voltage 400V. Max average forward current for resistive load at Tc=55degC 15A. |
15KP24CA | PanJit | Glass passivated junction transient voltage suppressor. Vrwm = 24 V. Vbr(min/max) = 26.7/30.7 V @ It = 5.0 mA. Ir = 800 uA. Vc = 38.9 V @ Ipp = 369 A. |
3EZ27 | PanJit | Glass passivated junction silicon zener. Power 3.0 Watts. Vz = 27 V. Izt = 28 mA. |
UF1601FCT | PanJit | Isolation ultrafast switching rectifier. Max recurrent peak reverse voltage 100 V. Max average forward rectified current at Tc = 100degC 16.0 A. |