Path:okDatasheet > Semiconductor δελτίο > PanJit Datasheet > PanJit-64
1SMB3EZ17 3KP13A SA7.0C 1N5930B P4KE39C P4SMAJ70C SD1050YT 3.0SMCJ28C ER1D SD360S BZT52-C5V6S MMSZ5232BS P6SMBJ26A P6KE16A SA15 ES1G P6KE8.2C P6SMBJ220C 1SMC5382 GBJ4D SD840S SD530T MMBZ5246B UF803F 3.0SMCJ11A GBU10K FR1D 3EZ56
Μέρος αριθ | Κατασκευαστής | Εφαρμογή |
---|---|---|
P6SMBJ8.5C | PanJit | Surfase mount transient voltage suppressor. 600W. Vrwm = 8.5 V. Vbr(min/max) = 9.44/11.92 V. It = 1.0 mA. Ir = 20 uA. Vc = 15.9 V. Ipp = 37.7 A. |
P4KE10CA | PanJit | Glass passivated junction transient voltage suppressor. 400 Watt peak power. 1.0 Watt steady state. Vrwm = 8.55V, Vbr(min/max) = 9.50/10.50V, It = 1 mA. |
1SMB3EZ17 | PanJit | Surface mount silicon zener diode. Power 3.0 Watts. Nominal zener voltage Vz = 17 V. Test current Izt = 44 mA |
3KP13A | PanJit | Glass passivated junction transient voltage suppressor. 3000 W peak pulse power. Vrwm = 13.00 V. Vbr = 14.40 V (min), 16.50 V (max). It = 1 mA. |
SA7.0C | PanJit | Glass passivated junction transient voltage suppressor. 500 Watt peak pulse power. Vrwm = 7.00V, Vbr(min/max) = 7.78/9.86V, It = 10 mA. |
1N5930B | PanJit | Glass passivated junction silicon zener diode. Power 1.5Watts. Nominal zener voltage Vz @ Izt = 16V. Test current Izt = 23.4 mA. |
P4KE39C | PanJit | Glass passivated junction transient voltage suppressor. 400 Watt peak power. 1.0 Watt steady state. Vrwm = 31.60V, Vbr(min/max) = 35.10/42.90V, It = 1 mA. |
P4SMAJ70C | PanJit | Surfase mount transient voltage suppressor. 400W. Reverse stand-off voltage 70 V. Breakdown voltage(min/max) 77.8/98.6 V. Test current 1.0 mA. Reverse leakage 5 uA. Max clamp voltage 125 V. Peak pulse current 3.2 A. |
SD1050YT | PanJit | DPak surfase mount schottky barrier rectifier. Max recurrent peak reverse voltage 50 V. Max average forward rectified current at Tc = 75degC 10.0 A. |
3.0SMCJ28C | PanJit | Surface mount transient voltage suppressor. Peak power pulse 3000 W. Vrwm = 28 V. Vbr(max/min) = 31.1/39.4 V @ It = 1.0 mA. Ir = 5 uA @ Vrwm. Vc = 50.0 V @ Ipp = 60.0 A. |
ER1D | PanJit | Surface mount superfast rectifier. Max recurrent peak reverse voltage 200V. Max average forward rectified current 1.0A. |
SD360S | PanJit | Surfase mount schottky barrier rectifier. Max recurrent peak reverse voltage 60 V. Max average forward rectified current at Tc = 75degC 3 A. |
BZT52-C5V6S | PanJit | Surface mount silicon zener diode. Power 200 mWatts. Nominal zener voltage 5.6 V |
MMSZ5232BS | PanJit | Surface mount silicon zener diode. Nominal zener voltage Vz = 5.6 V @ Izt. 200 mWatts zener diode. |
P6SMBJ26A | PanJit | Surfase mount transient voltage suppressor. 600W. Vrwm = 26 V. Vbr(min/max) = 28.9/33.2 V. It = 1.0 mA. Ir = 5 uA. Vc = 42.1 V. Ipp = 14.2 A. |
P6KE16A | PanJit | Glass passivated junction transient voltage suppressor. 600 Watt peak power. 5.0 Watt steady state. Vrwm = 13.60V, Vbr(min/max) = 15.20/16.80V, It = 1 mA. |
SA15 | PanJit | Glass passivated junction transient voltage suppressor. 500 Watt peak pulse power. Vrwm = 15.00V, Vbr(min/max) = 16.70/21.10V, It = 1 mA. |
ES1G | PanJit | Surface mount superfast rectifier. Max recurrent peak reverse voltage 400V. Max average forward rectified current 1.0 A. |
P6KE8.2C | PanJit | Glass passivated junction transient voltage suppressor. 600 Watt peak power. 5.0 Watt steady state. Vrwm = 6.63V, Vbr(min/max) = 7.38/9.02V, It = 10 mA. |
P6SMBJ220C | PanJit | Surfase mount transient voltage suppressor. 600W. Vrwm = 220 V. Vbr(min/max) = 242/310.2 V. It = 1.0 mA. Ir = 5 uA. Vc = 394 V. Ipp = 1.5 A. |
1SMC5382 | PanJit | Surface mount silicon zener diode. Power 5.0 Watts. Nominal zener voltage Vz = 140 V. Test current Izt = 8 mA. |
GBJ4D | PanJit | Glass passivated single-phase bridge rectifier. Max recurrent peak reverse voltage 200V. Max average forward rectified output current 4.0 A(Tc=100degC). |
SD840S | PanJit | Surfase mount schottky barrier rectifier. Max recurrent peak reverse voltage 40 V. Max average forward rectified current at Tc = 85degC 8.0 A. |
SD530T | PanJit | Surfase mount schottky barrier rectifier. Max recurrent peak reverse voltage 30 V. Max average forward rectified current at Tc = 75degC 5 A. |
MMBZ5246B | PanJit | Surface mount silicon zener diode. Nominal zener voltage Vz = 16 V @ Izt. 500 mWatts zener diode. |
UF803F | PanJit | Isolation ultrafast switching rectifier. Max recurrent peak reverse voltage 300 V. Max average forward rectified current 8.0 A. |
3.0SMCJ11A | PanJit | Surface mount transient voltage suppressor. Peak power pulse 3000 W. Vrwm = 11 V. Vbr(max/min) = 12.2/14.0 V @ It = 1.0 mA. Ir = 5 uA @ Vrwm. Vc = 18.2 V @ Ipp = 184.8 A. |
GBU10K | PanJit | Glass passivated single-phase bridge rectifier. Max recurrent peak reverse voltage 800 V. Max average forward rectified output current at Tc=100degC 10.0 A. |
FR1D | PanJit | Surface mount fast switching rectifier. Max recurrent peak reverse voltage 200V. Max average forward rectified current 1.0 A. |
3EZ56 | PanJit | Glass passivated junction silicon zener. Power 3.0 Watts. Vz = 56 V. Izt = 13 mA. |