| Μέρος αριθ | Κατασκευαστής | Εφαρμογή |
|---|
| UF154 | PanJit | Ultrafast switching rectifier. Peak reverse voltage 400 V. Average forward current 1.5 A. |
| P4KE400A | PanJit | Glass passivated junction transient voltage suppressor. 400 Watt peak power. 1.0 Watt steady state. Vrwm = 342.00V, Vbr(min/max) = 380.00/420.00V, It = 1 mA. |
| BZX84C3W | PanJit | Surface mount silicon zener diode. Power 200 mWatts. Nominal zener voltage 3 V |
| P4SMAJ85C | PanJit | Surfase mount transient voltage suppressor. 400W. Reverse stand-off voltage 85 V. Breakdown voltage(min/max) 94.4/119.2 V. Test current 1.0 mA. Reverse leakage 5 uA. Max clamp voltage 151 V. Peak pulse current 2.6 A. |
| SL33 | PanJit | Low VF surfase mount schottky barrier rectifier. Max recurrent peak reverse voltage 30 V. Max average forward rectified current 3.0 A. |
| 3.0SMCJ15A | PanJit | Surface mount transient voltage suppressor. Peak power pulse 3000 W. Vrwm = 15 V. Vbr(max/min) = 16.7/19.2 V @ It = 1.0 mA. Ir = 5 uA @ Vrwm. Vc = 24.4 V @ Ipp = 123.0 A. |
| 1.5SMCJ85C | PanJit | Surface mount transient voltage suppressor. 1500W peak power pulse. Vrmv = 85V; Vbr(min/max) = 94.4/119.2V @ It = 1.0mA; Ir(@ Vrwm) = 5uA; Vc = 151V, @ Ipp = 9.9A |
| P6KE22C | PanJit | Glass passivated junction transient voltage suppressor. 600 Watt peak power. 5.0 Watt steady state. Vrwm = 17.80V, Vbr(min/max) = 19.80/24.20V, It = 1 mA. |
| P4SMAJ17CA | PanJit | Surfase mount transient voltage suppressor. Reverse stand-off voltage 17 V. Breakdown voltage(min/max) 18.9/21.7 V. Test current 1.0 mA. Reverse leakage 5 uA. Max clamp voltage 27.6 V. Peak pulse current 14.5 A. |
| 1SMB5955 | PanJit | Surface mount silicon zener diode. Power 1.5 Watts. Nominal zener voltage Vz = 180 V. Test current Izt = 2.1 mA |
| CM5001 | PanJit | High current silicon bridge rectifier. Max recurrent peak reverse voltage 100V. Max average forward current 50.0A |
| 1.5SMCJ45C | PanJit | Surface mount transient voltage suppressor. 1500W peak power pulse. Vrmv = 45V; Vbr(min/max) = 50.0/63.3V @ It = 1.0mA; Ir(@ Vrwm) = 5uA; Vc = 80.3V, @ Ipp = 18.7A |
| SD10100YT | PanJit | DPak surfase mount schottky barrier rectifier. Max recurrent peak reverse voltage 100 V. Max average forward rectified current at Tc = 75degC 10.0 A. |
| ER1000 | PanJit | Superfast recovery rectifier. Max recurrent peak reverse voltage 50V. Max average forward rectified (Tc=100degC) 10.0A. |
| SA6.5CA | PanJit | Glass passivated junction transient voltage suppressor. 500 Watt peak pulse power. Vrwm = 6.50V, Vbr(min/max) = 7.22/8.30V, It = 10 mA. |
| GBU8D | PanJit | Glass passivated single-phase bridge rectifier. Max recurrent peak reverse voltage 200 V. Max average forward rectified output current at Tc=100degC 8.0 A, at Ta=40degC 6.0 A. |
| TSP120SB | PanJit | Surfase mount bi-directional thyristor surge protector device. Rated repetitive peakoff-state voltage 120V. Breakover voltage 160V. On-state voltage 5V. Repetitive peakoff-state current 5uA Breakover current 800mA. |
| 3.0SMCJ54 | PanJit | Surface mount transient voltage suppressor. 3000 W peak power pulse. Vrwm = 54 V. Vbr(min/max) = 60.0/76.0 V @ It. Ir = 5 uA @ Vrwm. Vc = 96.3 V @ Ipp = 31.2 A. |
| CM2501 | PanJit | High current silicon bridge rectifier. Max recurrent peak reverse voltage 100V. Max average forward current for resistive load 25A. Non-repetive peak forward surge current at rated load 300A. |
| SB850DC | PanJit | DDPak surfase mount schottky barrier rectifier. Max recurrent peak reverse voltage 50 V. Max average forward rectified current at Ta = 100degC 8 A. |
| CM3501 | PanJit | High current silicon bridge rectifier. Max recurrent peak reverse voltage 100V. Max average forward current for resistive load 35A. Non-repetive peak forward surge current at rated load 400A. |
| SB1680CT | PanJit | Schottky barrier rectifier. Max recurrent peak reverse voltage 80 V. Max average forward rectified current at Tc = 90degC 16.0 A. |
| AM108 | PanJit | Silicon miniature single-phase bridge. Max recurrent peak reverse voltage 800 V. Max average forward current 1.0 A. |
| 3EZ22 | PanJit | Glass passivated junction silicon zener. Power 3.0 Watts. Vz = 22 V. Izt = 34 mA. |
| P6SMBJ40A | PanJit | Surfase mount transient voltage suppressor. 600W. Vrwm = 40 V. Vbr(min/max) = 44.4/51.1 V. It = 1.0 mA. Ir = 5 uA. Vc = 64.5 V. Ipp = 9.3 A. |
| P4KE130 | PanJit | Glass passivated junction transient voltage suppressor. 400 Watt peak power. 1.0 Watt steady state. Vrwm = 105.00V, Vbr(min/max) = 117.00/143.00V, It = 1mA. |
| 1N5355B | PanJit | Glass passivated junction silicon zener diode. Power 5.0 Watt. Vz @ Izt = 18V, Izt = 65mA |
| P6SMBJ11C | PanJit | Surfase mount transient voltage suppressor. 600W. Vrwm = 11 V. Vbr(min/max) = 12.2/15.4 V. It = 1.0 mA. Ir = 5 uA. Vc = 20.1 V. Ipp = 29.9 A. |
| SD1040CT | PanJit | Schottky barrier rectifier. Max recurrent peak reverse voltage 40 V. Max average forward rectified current at Tc = 75degC 10.0 A. |
| MMBZ5252BW | PanJit | Surface mount silicon zener diode. Nominal zener voltage Vz = 24 V @ Izt. 200 mWatts zener diode. |
