| Μέρος αριθ | Κατασκευαστής | Εφαρμογή |
|---|
| SD453R25S20MTC | IR | Fast recovery diode |
| IRF722 | IR | N-channel HEXFET, 400V, 2.8A |
| IRG4BC20FD-S | IR | Insulated gate bipolar transistor with ultrafast soft recovery diode. VCES = 600V, VCE(on)typ. = 1.66V @ VGE = 15V, IC = 9.0A |
| ST780C06L0L | IR | Phase control thyristor |
| IRFPF50 | IR | HEXFET power MOSFET. VDSS = 900 V, RDS(on) = 1.6 Ohm, ID = 6.7 A |
| 303UR120P2 | IR | Standard recovery diode |
| SD253R08S20MSV | IR | Fast recovery diode |
| IRF723 | IR | N-channel HEXFET, 350V, 2.8A |
| IRG4PC40U | IR | Insulated gate bipolar transistor. VCES = 600V, VCE(on)typ. = 1.72V @ VGE = 15V, IC = 20A |
| 305URA200 | IR | Standard recovery diode |
| IRFP254N | IR | HEXFET power MOSFET. VDSS = 250 V, RDS(on) = 125 mOhm, ID = 23 A |
| ST780C06L1 | IR | Phase control thyristor |
| SD200N24MBC | IR | Standard recovery diode |
| ST110S12P0VL | IR | Phase control thyristor |
| ST180C04C2 | IR | Phase control thyristor |
| 305UA250P3 | IR | Standard recovery diode |
| SD150R20MSC | IR | Standard recovery diode |
| ST203S12MFJ0L | IR | Inverter grade thyristor |
| ST173C10CHK2 | IR | Inverter grade thyristor |
| ST300C18L0L | IR | Phase control thyristor |
| ST110S12P1V | IR | Phase control thyristor |
| SD103N16S15PSV | IR | Fast recovery diode |
| SD300N32PBC | IR | Standard recovery diode |
| ST203C10CHH2L | IR | Inverter grade thyristor |
| SD150N20PC | IR | Standard recovery diode |
| 301UR120P2 | IR | Standard recovery diode |
| 130HF80PBV | IR | Standard recovery diode |
| IRFIZ34N | IR | HEXFET power MOSFET. VDSS = 55V, RDS(on) = 0.04 Ohm, ID = 21A |
| IRF6601 | IR | Power MOSFET, 20V, 26A |
| SD203R04S10PSC | IR | Fast recovery diode |
