| Μέρος αριθ | Κατασκευαστής | Εφαρμογή |
|---|
| SD403C16S10C | IR | Fast recovery diode |
| ST2600C26R0L | IR | Phase control thyristor |
| JANTXV2N6851 | IR | HEXFET power mosfet |
| 303UR160P5 | IR | Standard recovery diode |
| SD203N20S15MC | IR | Fast recovery diode |
| SD30OC20C | IR | Standard recovery diode |
| IRF5852 | IR | HEXFET power MOSFET. VDSS = 20V, RDS(on) = 0.090 Ohm, ID = 2.7A @ VGS = 4.5V, RDS(on) = 0.120 Ohm, ID = 2.2A @ VGS = 2.5V |
| HFA100MD60C | IR | HEXFRED |
| IRU1010-33CD | IR | 1A low dropout positive fixed 3.3V regulator |
| IRFZ44E | IR | Power MOSFET, 60V, 48A |
| SD103R10S15PC | IR | Fast recovery diode |
| JANTX2N6800 | IR | HEXFET power mosfet |
| SD400OC38R | IR | Standard recovery diode |
| 302U160AYPD | IR | Standard recovery diode |
| SD203N04S10MBC | IR | Fast recovery diode |
| SD103N16S20MSV | IR | Fast recovery diode |
| IRF1010ES | IR | HEXFET power MOSFET. VDSS = 60V, RDS(on) = 12 mOhm, ID = 84A. |
| SD150N20PSC | IR | Standard recovery diode |
| 47L60 | IR | Standard recovery diode |
| SD203N14S20PBC | IR | Fast recovery diode |
| ST303C08HK1L | IR | Inverter grade thyristor |
| IRGPC30U | IR | Insulated gate bipolar transistor |
| IRFIB6N60A | IR | HEXFET power MOSFET. VDSS = 600V, RDS(on) = 0.75 Ohm, ID = 5.5 A |
| IRF9530 | IR | P-channel MOSFET, 100V, 12A |
| ST1230C14K0L | IR | Phase control thyristor |
| IRG4BC15UD-S | IR | Insulated gate bipolar transistor with ultrafast soft recovery diode. VCES = 600V, VCE(on)typ. = 2.02V @ VGE = 15V, IC = 7.8A |
| SD153R16S10PV | IR | Fast recovery diode |
| SD453N12S20PSC | IR | Fast recovery diode |
| PVA3354 | IR | BOSFET photovoltaic relay |
| 300HF80MS | IR | Standard recovery diode |
