Path:okDatasheet > Semiconductor δελτίο > IR Datasheet > IR-135
0MC SD203R20S10PC 307UR160 SD453N25S20MSC ST110S16P0 ST2100C40R2L 309UA200P5 ST2600C24R3L IRLL110TR IRF9610 SD153R04S10MV SD253R04S20PSV ST230C04C3L SD453N25S20PSC SD203R12S15PC IRFR120N IRFS23N15D 200HF80MBV SD153N16S15PBV SD400OC30R 309U160P3 SD103R14S20MBC IRH7450SE SD300N20PB
Μέρος αριθ | Κατασκευαστής | Εφαρμογή |
---|---|---|
IRKL43020 | IR | Thyristor/diode and thyristor/thyristor |
SD203R25S10MC | IR | Fast recovery diode |
SD203R20S10PC | IR | Fast recovery diode |
307UR160 | IR | Standard recovery diode |
SD453N25S20MSC | IR | Fast recovery diode |
ST110S16P0 | IR | Phase control thyristor |
ST2100C40R2L | IR | Phase control thyristor |
309UA200P5 | IR | Standard recovery diode |
ST2600C24R3L | IR | Phase control thyristor |
IRLL110TR | IR | N-channel MOSFET for fast switching applications, 100V, 1.5A |
IRF9610 | IR | HEXFET power MOSFET. VDSS = -200V, RDS(on) = 3.0 Ohm, ID = -1.8A |
SD153R04S10MV | IR | Fast recovery diode |
SD253R04S20PSV | IR | Fast recovery diode |
ST230C04C3L | IR | Phase control thyristor |
SD453N25S20PSC | IR | Fast recovery diode |
SD203R12S15PC | IR | Fast recovery diode |
IRFR120N | IR | HEXFET power MOSFET. VDSS = 100V, RDS(on) = 0.21 Ohm, ID = 9.4A |
IRFS23N15D | IR | HEXFET power MOSFET. VDSS = 150V, RDS(on) = 0.090 Ohm, ID = 23A |
200HF80MBV | IR | Standard recovery diode |
SD153N16S15PBV | IR | Fast recovery diode |
SD400OC30R | IR | Standard recovery diode |
309U160P3 | IR | Standard recovery diode |
SD103R14S20MBC | IR | Fast recovery diode |
IRH7450SE | IR | HEXFET transistor |
SD300N20PBC | IR | Standard recovery diode |
ST303C10CHK0L | IR | Inverter grade thyristor |
IRG4BC30U | IR | Insulated gate bipolar transistor. VCES = 600V, VCE(on)typ. = 1.95V @ VGE = 15V, IC = 12A |
IR2151S | IR | Self-oscillating half-bridge driver |
ST173S12MFK0L | IR | Inverter grade thyristor |
ST730C18L1 | IR | Phase control thyristor |