| Μέρος αριθ | Κατασκευαστής | Εφαρμογή |
|---|
| IRFP044 | IR | HEXFET power MOSFET. VDSS = 60V, RDS(on) = 0.028 Ohm, ID = 57A |
| IRF7468 | IR | HEXFET power MOSFET. VDSS = 40V, RDS(on) = 15.5mOhm @ VGS = 10V, ID = 9.4A |
| ST083S12PFK0 | IR | Inverter grade thyristor |
| IRG4BC30FD | IR | Insulated gate bipolar transistor with ultrafast soft recovery diode. VCES = 600V, VCE(on)typ. = 1.59V @ VGE = 15V, IC = 17A |
| ST173C12CHK3L | IR | Inverter grade thyristor |
| ST2100C34R1L | IR | Phase control thyristor |
| SD823C16S20C | IR | Fast recovery diode |
| SD600R28MSC | IR | Standard recovery diode |
| ST2100C32R2L | IR | Phase control thyristor |
| ST083S04PFK2 | IR | Inverter grade thyristor |
| IRF840LCL | IR | HEXFET power MOSFET. VDS = 500V, RDS(on) = 0.85 Ohm , ID = 8.0A |
| SD203R16S20MBV | IR | Fast recovery diode |
| IRFI840GLC | IR | HEXFET power MOSFET. VDSS = 500V, RDS(on) = 0.85 Ohm, ID = 4.5 A |
| 112RKI40S90 | IR | Phase control thyristor |
| IRHN7450SE | IR | HEXFET transistor |
| SD103R20S20MSC | IR | Fast recovery diode |
| IRFP17N50LS | IR | HEXFET power MOSFET. VDSS = 500V, RDS(on) = 0.28 Ohm, ID = 16A, Trr = 170ns. |
| IRF1302S | IR | Power MOSFET, 20V, 174A |
| IRG4PH30K | IR | Insulated gate bipolar transistor. VCES = 1200V, VCE(on)typ. = 3.10V @ VGE = 15V, IC = 10A |
| SD453R12S30MSC | IR | Fast recovery diode |
| IRF1405 | IR | HEXFET power MOSFET. VDSS = 55V, RDS(on) = 5.3 mOhm, ID = 169A. |
| SD203N25S15PC | IR | Fast recovery diode |
| ST300C12L2 | IR | Phase control thyristor |
| ST2100C40R0L | IR | Phase control thyristor |
| ST303C08CHK0L | IR | Inverter grade thyristor |
| IRFU3704 | IR | HEXFET power MOSFET. VDSS = 20V, RDS(on) = 9.5mOhm, ID = 75A |
| 45L | IR | Standard recovery diode |
| 81RIA40 | IR | Phase control thyristor |
| IRU1015-33CT | IR | 1.5A low dropout positive fixed 3.3V regulator |
| IRF7506 | IR | HEXFET power MOSFET. VDSS = -30V, RDS(on) = 0.27 Ohm |
