| Μέρος αριθ | Κατασκευαστής | Εφαρμογή |
|---|
| IRF7604 | IR | HEXFET power MOSFET. VDSS = -20V, RDS(on) = 0.09 Ohm. |
| SD150N14PSC | IR | Standard recovery diode |
| ST180S04M2L | IR | Phase control thyristor |
| SD103N20S10PC | IR | Fast recovery diode |
| ST380CH06C2L | IR | Phase control thyristor |
| 303UA160P5 | IR | Standard recovery diode |
| 200HFR80MV | IR | Standard recovery diode |
| IRG4BC20W | IR | Insulated gate bipolar transistor. VCES = 600V, VCE(on)typ. = 2.16V @ VGE = 15V, IC = 6.5A |
| 301UR120P5 | IR | Standard recovery diode |
| 305UR200P2 | IR | Standard recovery diode |
| ST333S08MFM1L | IR | Inverter grade thyristor |
| ST300C20L2L | IR | Phase control thyristor |
| SD603C20S20C | IR | Fast recovery diode |
| IRLU120N | IR | N-channel power MOSFET, 100V, 10A |
| SD103R25S20MSC | IR | Fast recovery diode |
| ST230S04M0 | IR | Phase control thyristor |
| ST1200C20K2L | IR | Phase control thyristor |
| SD203R16S20MV | IR | Fast recovery diode |
| SD203N12S15MC | IR | Fast recovery diode |
| IRG4BC30 | IR | Insulated gate bipolar transistor. VCES = 600V, VCE(on)typ. = 1.59V @ VGE = 15V, IC = 17A |
| ST333S04MFM3 | IR | Inverter grade thyristor |
| SD300N12PBC | IR | Standard recovery diode |
| ST180S20M0 | IR | Phase control thyristor |
| SD150R25PC | IR | Standard recovery diode |
| ST330C04L1L | IR | Phase control thyristor |
| ST303C10LHK3 | IR | Inverter grade thyristor |
| IRF9640STRR | IR | P-channel MOSFET for fast switching applications, 200V, 11A |
| SD203N10S10MBC | IR | Fast recovery diode |
| ST303C04HK0L | IR | Inverter grade thyristor |
| IRFS38N20D | IR | HEXFET power MOSFET. VDSS = 200V, RDS(on) = 0.054 Ohm, ID = 44A |
