| Μέρος αριθ | Κατασκευαστής | Εφαρμογή |
|---|
| SMAJ54 | JGD | 400 W peak pulse power. Surface mount transient voltage suppressor. Working peak reverse voltage 54 V. |
| ZMM5229D | JGD | Surface mount zener diode. Nominal zener voltage 4.3 V. Test current 20 mA. +-20% tolerance. |
| SMAJ14CA | JGD | 400 W peak pulse power. Surface mount transient voltage suppressor. Working peak reverse voltage 14 V. Bidirectional. |
| 1N5535 | JGD | 0.4 W, low voltage avalanche diode. Nominal zener voltage 15.0 V. Test current 1.0 mAdc. +-20% tolerance. |
| 3EZ130D4 | JGD | 3 W, silicon zener diode. Nominal voltage 130 V, current 5.8 mA, +-4% tolerance. |
| P6KE100C | JGD | 400 Watt peak power. Transient voltage suppressor diode. Nominal voltage 100 V. Bidirectional. |
| 1N5939 | JGD | 1.5 W, silicon zener diode. Zener voltage 39V. Test current 9.6 mA. +-20% tolerance. |
| SMAJ51 | JGD | 400 W peak pulse power. Surface mount transient voltage suppressor. Working peak reverse voltage 51 V. |
| 3EZ56D1 | JGD | 3 W, silicon zener diode. Nominal voltage 56 V, current 13 mA, +-1% tolerance. |
| SMAJ64CA | JGD | 400 W peak pulse power. Surface mount transient voltage suppressor. Working peak reverse voltage 64 V. Bidirectional. |
| 3EZ6.8D2 | JGD | 3 W, silicon zener diode. Nominal voltage 6.8 V, current 110 mA, +-2% tolerance. |
| SMAJ7.0A | JGD | 400 W peak pulse power. Surface mount transient voltage suppressor. Working peak reverse voltage 7.0 V. |
| 1N4107 | JGD | 500mW low noise silicon zener diode. Nominal zener voltage 13V. |
| 1N750D | JGD | 500mW, silicon zener diode. Zener voltage 4.7 V. Test current 20 mA. +-1% tolerance. |
| P4KE68C | JGD | 400 Watt peak power. Transient voltage suppressor diode. Nominal voltage 68 V. Bidirectional. |
| 3EZ12D5 | JGD | 3 W, silicon zener diode. Nominal voltage 12 V, current 63 mA, +-5% tolerance. |
| ZMM5226B | JGD | Surface mount zener diode. Nominal zener voltage 3.3 V. Test current 20 mA. +-5% tolerance. |
| SR504 | JGD | Schottky barrier rectifier. Max recurrent peak reverse voltage 40 V. Max average forward current 5.0 A. |
| 1N4734C | JGD | 1W zener diode. Nominal zener voltage 5.6V. 2% tolerance. |
| 1N959D | JGD | 0.5W, silicon zener diode. Zener voltage 8.2V. Test current 15.0mA. +-1% tolerance. |
| 1N5522D | JGD | 0.4 W, low voltage avalanche diode. Nominal zener voltage 4.7 V. Test current 10 mAdc. +-1% tolerance. |
| BY297 | JGD | 2.0A, fast recovery rectifier. Max recurrent peak reverse voltage 200V. |
| HER606G | JGD | 6.0 A, glass passivated high efficiency rectifier. Max recurrent peak reverse voltage 600V. |
| 1N5546D | JGD | 0.4 W, low voltage avalanche diode. Nominal zener voltage 33.0 V. Test current 1.0 mAdc. +-1% tolerance. |
| 1N4754D | JGD | 1W zener diode. Nominal zener voltage 39V. 1% tolerance. |
| ZMM55-C4V7 | JGD | Surface mount zener diode, 500mW. Nominal zener voltage 4.4-5.0 V. Test current 5 mA. +-5% tolerance. |
| SMBJ24 | JGD | Surface mount transient voltage suppressor. Breakdown voltage 26.7 V (min), 32.6 V (max). Test current 1.0 mA. |
| 1N5536C | JGD | 0.4 W, low voltage avalanche diode. Nominal zener voltage 16.0 V. Test current 1.0 mAdc. +-2% tolerance. |
| 3EZ160D3 | JGD | 3 W, silicon zener diode. Nominal voltage 160 V, current 4.7 mA, +-3% tolerance. |
| SF62 | JGD | Super fast rectifier. Max recurrent peak reverse voltage 100 V. Max average forward current 6.0 A. |
