Path:okDatasheet > Semiconductor δελτίο > JGD Datasheet > JGD-104
30C P4KE110 1N4614 TMBD6050 ZMM55-D12 ZMM5239B SMAJ6.0C HER107L F1A2 SMBJ5956A 1N5927B BZX84C47 SMAJ14 HA16G HER603G SMAJ110C ZMM5241D 1N4123C SMBJ90A 1N750A 1N747C 3EZ36D10 1N4751 SMBJ5.0 1N4117C 1N4104C SMAJ45C ZMM5250A
Μέρος αριθ | Κατασκευαστής | Εφαρμογή |
---|---|---|
SS100 | JGD | Surface mount schottky barrier rectifier. Max recurrent peak reverse voltage 100 V. Max average forward rectified current 1.0 A. |
SMAJ51CA | JGD | 400 W peak pulse power. Surface mount transient voltage suppressor. Working peak reverse voltage 51 V. Bidirectional. |
SMAJ130C | JGD | 400 W peak pulse power. Surface mount transient voltage suppressor. Working peak reverse voltage 130 V. Bidirectional. |
P4KE110 | JGD | 400 Watt peak power. Transient voltage suppressor diode. Nominal voltage 110 V. |
1N4614 | JGD | 500mW low noise silicon zener diode. Nominal zener voltage 1.8V. |
TMBD6050 | JGD | Surface mount switching diode. Max forward voltage 1.1V at 100mA. |
ZMM55-D12 | JGD | Surface mount zener diode, 500mW. Nominal zener voltage 11.4-12.7 V. Test current 5 mA. +-20% tolerance. |
ZMM5239B | JGD | Surface mount zener diode. Nominal zener voltage 9.1 V. Test current 20 mA. +-5% tolerance. |
SMAJ6.0C | JGD | 400 W peak pulse power. Surface mount transient voltage suppressor. Working peak reverse voltage 6.0 V. Bidirectional. |
HER107L | JGD | 1.0A, glass passivated high efficiency rectifier. Max recurrent peak reverse voltage 800V. |
F1A2 | JGD | 1.0 A fast recovery rectifier. Max recurrent peak reverse voltage 100 V. |
SMBJ5956A | JGD | 1.5W silicon surface mount zener diode. Zener voltage 200 V. Test current 1.9 mA. +-10% tolerance. |
1N5927B | JGD | 1.5 W, silicon zener diode. Zener voltage 12V. Test current 31.2 mA. +-5% tolerance. |
BZX84C47 | JGD | 350mW zener diode, 47V |
SMAJ14 | JGD | 400 W peak pulse power. Surface mount transient voltage suppressor. Working peak reverse voltage 14 V. |
HA16G | JGD | 1.0A, glass passivated high efficiency rectifier. Max recurrent peak reverse voltage 600V. |
HER603G | JGD | 6.0 A, glass passivated high efficiency rectifier. Max recurrent peak reverse voltage 200V. |
SMAJ110C | JGD | 400 W peak pulse power. Surface mount transient voltage suppressor. Working peak reverse voltage 110 V. Bidirectional. |
ZMM5241D | JGD | Surface mount zener diode. Nominal zener voltage 11 V. Test current 20 mA. +-20% tolerance. |
1N4123C | JGD | 500mW low noise silicon zener diode. Nominal zener voltage 39V. 2% tolerance. |
SMBJ90A | JGD | Surface mount transient voltage suppressor. Breakdown voltage 100 V (min), 111 V (max). Test current 1.0 mA. |
1N750A | JGD | 500mW, silicon zener diode. Zener voltage 4.7 V. Test current 20 mA. +-5% tolerance. |
1N747C | JGD | 500mW, silicon zener diode. Zener voltage 3.6 V. Test current 20 mA. +-2% tolerance. |
3EZ36D10 | JGD | 3 W, silicon zener diode. Nominal voltage 36 V, current 21 mA, +-10% tolerance. |
1N4751 | JGD | 1W zener diode. Nominal zener voltage 30V. 10% tolerance. |
SMBJ5.0 | JGD | Surface mount transient voltage suppressor. Breakdown voltage 6.40 V (min), 7.30 V (max). Test current 10.0 mA. |
1N4117C | JGD | 500mW low noise silicon zener diode. Nominal zener voltage 25V. 2% tolerance. |
1N4104C | JGD | 500mW low noise silicon zener diode. Nominal zener voltage 10V. 2% tolerance. |
SMAJ45C | JGD | 400 W peak pulse power. Surface mount transient voltage suppressor. Working peak reverse voltage 45 V. Bidirectional. |
ZMM5250A | JGD | Surface mount zener diode. Nominal zener voltage 20 V. Test current 6.2 mA. +-3% tolerance. |