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30C P4KE110 1N4614 TMBD6050 ZMM55-D12 ZMM5239B SMAJ6.0C HER107L F1A2 SMBJ5956A 1N5927B BZX84C47 SMAJ14 HA16G HER603G SMAJ110C ZMM5241D 1N4123C SMBJ90A 1N750A 1N747C 3EZ36D10 1N4751 SMBJ5.0 1N4117C 1N4104C SMAJ45C ZMM5250A

JGD Datasheets Κατάλογος-104

Μέρος αριθΚατασκευαστήςΕφαρμογή
SS100 JGDSurface mount schottky barrier rectifier. Max recurrent peak reverse voltage 100 V. Max average forward rectified current 1.0 A.
SMAJ51CA JGD400 W peak pulse power. Surface mount transient voltage suppressor. Working peak reverse voltage 51 V. Bidirectional.
SMAJ130C JGD400 W peak pulse power. Surface mount transient voltage suppressor. Working peak reverse voltage 130 V. Bidirectional.
P4KE110 JGD400 Watt peak power. Transient voltage suppressor diode. Nominal voltage 110 V.
1N4614 JGD500mW low noise silicon zener diode. Nominal zener voltage 1.8V.
TMBD6050 JGDSurface mount switching diode. Max forward voltage 1.1V at 100mA.
ZMM55-D12 JGDSurface mount zener diode, 500mW. Nominal zener voltage 11.4-12.7 V. Test current 5 mA. +-20% tolerance.
ZMM5239B JGDSurface mount zener diode. Nominal zener voltage 9.1 V. Test current 20 mA. +-5% tolerance.
SMAJ6.0C JGD400 W peak pulse power. Surface mount transient voltage suppressor. Working peak reverse voltage 6.0 V. Bidirectional.
HER107L JGD1.0A, glass passivated high efficiency rectifier. Max recurrent peak reverse voltage 800V.
F1A2 JGD1.0 A fast recovery rectifier. Max recurrent peak reverse voltage 100 V.
SMBJ5956A JGD1.5W silicon surface mount zener diode. Zener voltage 200 V. Test current 1.9 mA. +-10% tolerance.
1N5927B JGD1.5 W, silicon zener diode. Zener voltage 12V. Test current 31.2 mA. +-5% tolerance.
BZX84C47 JGD350mW zener diode, 47V
SMAJ14 JGD400 W peak pulse power. Surface mount transient voltage suppressor. Working peak reverse voltage 14 V.
HA16G JGD1.0A, glass passivated high efficiency rectifier. Max recurrent peak reverse voltage 600V.
HER603G JGD6.0 A, glass passivated high efficiency rectifier. Max recurrent peak reverse voltage 200V.
SMAJ110C JGD400 W peak pulse power. Surface mount transient voltage suppressor. Working peak reverse voltage 110 V. Bidirectional.
ZMM5241D JGDSurface mount zener diode. Nominal zener voltage 11 V. Test current 20 mA. +-20% tolerance.
1N4123C JGD500mW low noise silicon zener diode. Nominal zener voltage 39V. 2% tolerance.
SMBJ90A JGDSurface mount transient voltage suppressor. Breakdown voltage 100 V (min), 111 V (max). Test current 1.0 mA.
1N750A JGD500mW, silicon zener diode. Zener voltage 4.7 V. Test current 20 mA. +-5% tolerance.
1N747C JGD500mW, silicon zener diode. Zener voltage 3.6 V. Test current 20 mA. +-2% tolerance.
3EZ36D10 JGD3 W, silicon zener diode. Nominal voltage 36 V, current 21 mA, +-10% tolerance.
1N4751 JGD1W zener diode. Nominal zener voltage 30V. 10% tolerance.
SMBJ5.0 JGDSurface mount transient voltage suppressor. Breakdown voltage 6.40 V (min), 7.30 V (max). Test current 10.0 mA.
1N4117C JGD500mW low noise silicon zener diode. Nominal zener voltage 25V. 2% tolerance.
1N4104C JGD500mW low noise silicon zener diode. Nominal zener voltage 10V. 2% tolerance.
SMAJ45C JGD400 W peak pulse power. Surface mount transient voltage suppressor. Working peak reverse voltage 45 V. Bidirectional.
ZMM5250A JGDSurface mount zener diode. Nominal zener voltage 20 V. Test current 6.2 mA. +-3% tolerance.

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