| Μέρος αριθ | Κατασκευαστής | Εφαρμογή |
|---|
| SMAJ33A | JGD | 400 W peak pulse power. Surface mount transient voltage suppressor. Working peak reverse voltage 33 V. |
| P4KE160C | JGD | 400 Watt peak power. Transient voltage suppressor diode. Nominal voltage 160 V. Bidirectional. |
| BAV99 | JGD | Surface mount switching diode. Max forward voltage 1.00V at 50mA. |
| 1N5945C | JGD | 1.5 W, silicon zener diode. Zener voltage 68 V. Test current 5.5 mA. +-2% tolerance. |
| 1N5532A | JGD | 0.4 W, low voltage avalanche diode. Nominal zener voltage 12.0 V. Test current 1.0 mAdc. +-10% tolerance. |
| KBL408 | JGD | Single-phase 4.0 A silicon bridge rectifier. Max recurrent peak reverse voltage 800V. |
| KBPC800 | JGD | Single phase 8.0 A silicon bridge rectifier. Max recurrent peak reverse voltage 50V. |
| SFR154 | JGD | Soft fast recovery rectifier. Max recurrent peak reverse voltage 400 V. Max average forward current 1.5 A. |
| 2W06G | JGD | Single phase 2.0 A glass passivated bridge rectifier. Max recurrent peak reverse voltage 600 V. |
| P4KE12C | JGD | 400 Watt peak power. Transient voltage suppressor diode. Nominal voltage 12 V. Bidirectional. |
| 1N4111 | JGD | 500mW low noise silicon zener diode. Nominal zener voltage 17V. |
| KBU1001G | JGD | Single phase 10.0 A glass passivated bridge rectifier. Max recurrent peak reverse voltage 100V. |
| 1N5947A | JGD | 1.5 W, silicon zener diode. Zener voltage 82 V. Test current 4.6 mA. +-10% tolerance. |
| 1N4753 | JGD | 1W zener diode. Nominal zener voltage 36V. 10% tolerance. |
| P6KE200A | JGD | 400 Watt peak power. Transient voltage suppressor diode. Nominal voltage 200 V. |
| SR220 | JGD | Schottky barrier rectifier. Max recurrent peak reverse voltage 20 V. Max average forward current 2.0 A. |
| 1N991 | JGD | 0.5W, silicon zener diode. Zener voltage 180V. Test current 0.68mA. +-20% tolerance. |
| P6KE75 | JGD | 400 Watt peak power. Transient voltage suppressor diode. Nominal voltage 75 V. |
| P4KE30 | JGD | 400 Watt peak power. Transient voltage suppressor diode. Nominal voltage 30 V. |
| SMAJ8.5 | JGD | 400 W peak pulse power. Surface mount transient voltage suppressor. Working peak reverse voltage 8.5 V. |
| 1N987 | JGD | 0.5W, silicon zener diode. Zener voltage 120V. Test current 1.0mA. +-20% tolerance. |
| SMBJ5.0C | JGD | Surface mount transient voltage suppressor. Breakdown voltage 6.40 V (min), 7.30 V (max). Test current 10.0 mA. Bidirectional. |
| F1A5 | JGD | 1.0 A fast recovery rectifier. Max recurrent peak reverse voltage 600 V. |
| SMBJ64CA | JGD | Surface mount transient voltage suppressor. Breakdown voltage 71.1 V (min), 78.6 V (max). Test current 1.0 mA. Bidirectional. |
| P6KE12 | JGD | 400 Watt peak power. Transient voltage suppressor diode. Nominal voltage 12 V. |
| 1N5393G | JGD | 1.5 A, glass passivated rectifier. Max recurrent peak reverse voltage 200 V, max RMS voltage 140 V, max D. C blocking voltage 200 V. |
| S3B | JGD | Surface mount rectifier. Max recurrent peak reverse voltage 100 V. Max average forward rectified current 3.0 A. |
| P4KE130C | JGD | 400 Watt peak power. Transient voltage suppressor diode. Nominal voltage 130 V. Bidirectional. |
| 3EZ28D | JGD | 3 W, silicon zener diode. Nominal voltage 28 V, current 27 mA, +-20% tolerance. |
| F1A6 | JGD | 1.0 A fast recovery rectifier. Max recurrent peak reverse voltage 800 V. |
