| Μέρος αριθ | Κατασκευαστής | Εφαρμογή |
|---|
| P6KE56CA | JGD | 400 Watt peak power. Transient voltage suppressor diode. Nominal voltage 56 V. Bidirectional. |
| MSB051 | JGD | Single phase 0.5A glass passivated bridge rectifier. Repetitive peak reverse voltage 100V. |
| EM520 | JGD | 0.5 A silicon rectifier. Max recurrent peak reverse voltage 2000 V. |
| 1N5920A | JGD | 1.5 W, silicon zener diode. Zener voltage 6.2V. Test current 60.5 mA. +-10% tolerance. |
| 1N4120D | JGD | 500mW low noise silicon zener diode. Nominal zener voltage 30V. 1% tolerance. |
| 1N5947A | JGD | 1.5 W, silicon zener diode. Zener voltage 82 V. Test current 4.6 mA. +-10% tolerance. |
| BZX84C6V8 | JGD | 350mW zener diode, 6.8V |
| BB824 | JGD | Surface mount switching diode. |
| 3EZ33D10 | JGD | 3 W, silicon zener diode. Nominal voltage 33 V, current 23 mA, +-10% tolerance. |
| 1N5527 | JGD | 0.4 W, low voltage avalanche diode. Nominal zener voltage 7.5 V. Test current 1.0 mAdc. +-20% tolerance. |
| 1N5932A | JGD | 1.5 W, silicon zener diode. Zener voltage 20V. Test current 18.7 mA. +-10% tolerance. |
| S1J | JGD | Surface mount rectifier. Max recurrent peak reverse voltage 600 V. Max average forward rectified current 1.0 A. |
| P4KE20A | JGD | 400 Watt peak power. Transient voltage suppressor diode. Nominal voltage 20 V. |
| 3EZ43D4 | JGD | 3 W, silicon zener diode. Nominal voltage 43 V, current 17 mA, +-4% tolerance. |
| KBU804G | JGD | Single phase 8.0 A glass passivated bridge rectifier. Max recurrent peak reverse voltage 400V. |
| KBU1006 | JGD | Single phase 10.0 A silicon bridge rectifier. Max recurrent peak reverse voltage 600V. |
| 1N5545D | JGD | 0.4 W, low voltage avalanche diode. Nominal zener voltage 30.0 V. Test current 1.0 mAdc. +-1% tolerance. |
| ZMM5237D | JGD | Surface mount zener diode. Nominal zener voltage 8.2 V. Test current 20 mA. +-20% tolerance. |
| SMBJ17 | JGD | Surface mount transient voltage suppressor. Breakdown voltage 18.9 V (min), 23.1 V (max). Test current 1.0 mA. |
| RL206G | JGD | Glass passivated rectifier. Max recurrent peak reverse voltage 800 V. Max average forward rectified current 2.0 A. |
| SMAJ40C | JGD | 400 W peak pulse power. Surface mount transient voltage suppressor. Working peak reverse voltage 40 V. Bidirectional. |
| MMBD1501A | JGD | Surface mount switching diode. Max forward voltage 1.00V at 200mA. |
| SMBJ5954C | JGD | 1.5W silicon surface mount zener diode. Zener voltage 160 V. Test current 2.3 mA. +-2% tolerance. |
| SFR603 | JGD | Soft fast recovery rectifier. Max recurrent peak reverse voltage 200 V. Max average forward current 6.0 A. |
| P6KE62A | JGD | 400 Watt peak power. Transient voltage suppressor diode. Nominal voltage 62 V. |
| SMBJ13C | JGD | Surface mount transient voltage suppressor. Breakdown voltage 14.4 V (min), 17.6 V (max). Test current 1.0 mA. Bidirectional. |
| SMBJ30C | JGD | Surface mount transient voltage suppressor. Breakdown voltage 33.3 V (min), 40.7 V (max). Test current 1.0 mA. Bidirectional. |
| SMAJ33 | JGD | 400 W peak pulse power. Surface mount transient voltage suppressor. Working peak reverse voltage 33 V. |
| 6A2G | JGD | 6.0 A glass passivated rectifier. Max recurrent peak reverse voltage 200 V. |
| 1N5925B | JGD | 1.5 W, silicon zener diode. Zener voltage 10V. Test current 37.5 mA. +-5% tolerance. |
