| Μέρος αριθ | Κατασκευαστής | Εφαρμογή |
|---|
| 1N4125D | JGD | 500mW low noise silicon zener diode. Nominal zener voltage 47V. 1% tolerance. |
| UF4001 | JGD | Ultra fast rectifier. Max recurrent peak reverse voltage 50 V. Max average forward rectified current 1.0 A. |
| SMBJ5917 | JGD | 1.5W silicon surface mount zener diode. Zener voltage 4.7 V. Test current 79.8 mA. +-20% tolerance. |
| 1N5527D | JGD | 0.4 W, low voltage avalanche diode. Nominal zener voltage 7.5 V. Test current 1.0 mAdc. +-1% tolerance. |
| P6KE10 | JGD | 400 Watt peak power. Transient voltage suppressor diode. Nominal voltage 10 V. |
| 1N4742A | JGD | 1W zener diode. Zener voltage 12V. |
| P6KE170A | JGD | 400 Watt peak power. Transient voltage suppressor diode. Nominal voltage 170 V. |
| SMAJ30CA | JGD | 400 W peak pulse power. Surface mount transient voltage suppressor. Working peak reverse voltage 30 V. Bidirectional. |
