Path:okDatasheet > Semiconductor δελτίο > JGD Datasheet > JGD-12
P6KE51C FR105L 1N4007L 1N748A P6KE250CA 1A2 3EZ8.2D3 1N5545 3EZ11D5 1N5920D SMAJ51CA ZMM55-A22 1N4001L ZMM55-D8V2 SS18 SMAJ75CA HER305G MMBD1204 SMAJ28 P6KE18C ZMM5231D 1N983 6A4 SMAJ75 1N4128C SMBJ51A SMAJ75A
Μέρος αριθ | Κατασκευαστής | Εφαρμογή |
---|---|---|
1N5928 | JGD | 1.5 W, silicon zener diode. Zener voltage 13V. Test current 28.8 mA. +-20% tolerance. |
3EZ17D2 | JGD | 3 W, silicon zener diode. Nominal voltage 17 V, current 44 mA, +-2% tolerance. |
SF22 | JGD | Super fast rectifier. Max recurrent peak reverse voltage 100 V. Max average forward current 2.0 A. |
P6KE51C | JGD | 400 Watt peak power. Transient voltage suppressor diode. Nominal voltage 51 V. Bidirectional. |
FR105L | JGD | 1.0A, glass passivated fast recovery rectifier. Max recurrent peak reverse voltage 600V. |
1N4007L | JGD | 1.0A glass passivated rectifier. Max recurrent peak reverse voltage 1000V. |
1N748A | JGD | 500mW, silicon zener diode. Zener voltage 3.9 V. Test current 20 mA. +-5% tolerance. |
P6KE250CA | JGD | 400 Watt peak power. Transient voltage suppressor diode. Nominal voltage 250 V. Bidirectional. |
1A2 | JGD | 1.0 A silicon rectifier. Max recurrent peak reverse voltage 100 V. |
3EZ8.2D3 | JGD | 3 W, silicon zener diode. Nominal voltage 8.2 V, current 91 mA, +-3% tolerance. |
1N5545 | JGD | 0.4 W, low voltage avalanche diode. Nominal zener voltage 30.0 V. Test current 1.0 mAdc. +-20% tolerance. |
3EZ11D5 | JGD | 3 W, silicon zener diode. Nominal voltage 11 V, current 68 mA, +-5% tolerance. |
1N5920D | JGD | 1.5 W, silicon zener diode. Zener voltage 6.2V. Test current 60.5 mA. +-1% tolerance. |
SMAJ51CA | JGD | 400 W peak pulse power. Surface mount transient voltage suppressor. Working peak reverse voltage 51 V. Bidirectional. |
ZMM55-A22 | JGD | Surface mount zener diode, 500mW. Nominal zener voltage 20.8-23.3 V. Test current 5 mA. +-1% tolerance. |
1N4001L | JGD | 1.0A glass passivated rectifier. Max recurrent peak reverse voltage 50V. |
ZMM55-D8V2 | JGD | Surface mount zener diode, 500mW. Nominal zener voltage 7.7-8.7 V. Test current 5 mA. +-20% tolerance. |
SS18 | JGD | Surface mount schottky barrier rectifier. Max recurrent peak reverse voltage 80 V. Max average forward rectified current 1.0 A. |
SMAJ75CA | JGD | 400 W peak pulse power. Surface mount transient voltage suppressor. Working peak reverse voltage 75 V. Bidirectional. |
HER305G | JGD | 3.0 A, glass passivated high efficiency rectifier. Max recurrent peak reverse voltage 400V. |
MMBD1204 | JGD | Surface mount switching diode. Max forward voltage 1.00V at 200mA. |
SMAJ28 | JGD | 400 W peak pulse power. Surface mount transient voltage suppressor. Working peak reverse voltage 28 V. |
P6KE18C | JGD | 400 Watt peak power. Transient voltage suppressor diode. Nominal voltage 18 V. Bidirectional. |
ZMM5231D | JGD | Surface mount zener diode. Nominal zener voltage 5.1 V. Test current 20 mA. +-20% tolerance. |
1N983 | JGD | 0.5W, silicon zener diode. Zener voltage 82V. Test current 1.5mA. +-20% tolerance. |
6A4 | JGD | 6.0 A silicon rectifier. Max recurrent peak reverse voltage 400 V. |
SMAJ75 | JGD | 400 W peak pulse power. Surface mount transient voltage suppressor. Working peak reverse voltage 75 V. |
1N4128C | JGD | 500mW low noise silicon zener diode. Nominal zener voltage 60V. 2% tolerance. |
SMBJ51A | JGD | Surface mount transient voltage suppressor. Breakdown voltage 56.7 V (min), 62.7 V (max). Test current 1.0 mA. |
SMAJ75A | JGD | 400 W peak pulse power. Surface mount transient voltage suppressor. Working peak reverse voltage 75 V. |