| Μέρος αριθ | Κατασκευαστής | Εφαρμογή |
|---|
| 1N4761A | JGD | 1W zener diode. Zener voltage 75V. |
| 1N756D | JGD | 500mW, silicon zener diode. Zener voltage 8.2 V. Test current 20 mA. +-1% tolerance. |
| SMBJ5920C | JGD | 1.5W silicon surface mount zener diode. Zener voltage 6.2 V. Test current 60.5 mA. +-2% tolerance. |
| TMPD2836 | JGD | Surface mount switching diode. Max forward voltage 1.00V at 50mA. |
| 1EZ140D5 | JGD | 1 watt silicon zener diode. Nominal zener voltage 140V at 1.8mA. |
| 1EZ180D5 | JGD | 1 watt silicon zener diode. Nominal zener voltage 180V at 1.4mA. |
| 1N5544A | JGD | 0.4 W, low voltage avalanche diode. Nominal zener voltage 28.0 V. Test current 1.0 mAdc. +-10% tolerance. |
| 3EZ7.5D | JGD | 3 W, silicon zener diode. Nominal voltage 7.5 V, current 100 mA, +-20% tolerance. |
| P6KE24CA | JGD | 400 Watt peak power. Transient voltage suppressor diode. Nominal voltage 24 V. Bidirectional. |
| ZMM5258B | JGD | Surface mount zener diode. Nominal zener voltage 36 V. Test current 3.4 mA. +-5% tolerance. |
| 1N989D | JGD | 0.5W, silicon zener diode. Zener voltage 150V. Test current 0.85mA. +-1% tolerance. |
| 1N5531C | JGD | 0.4 W, low voltage avalanche diode. Nominal zener voltage 11.0 V. Test current 1.0 mAdc. +-2% tolerance. |
| 1N5821 | JGD | 3.0 A, schottky barrier rectifier. Max reccurent peak reverse voltage 30 V, max RMS voltage 21 V, max DC blocking voltage 30 V. |
| 1N978A | JGD | 0.5W, silicon zener diode. Zener voltage 51V. Test current 2.5mA. +-10% tolerance. |
| P6KE27CA | JGD | 400 Watt peak power. Transient voltage suppressor diode. Nominal voltage 27 V. Bidirectional. |
| P6KE300 | JGD | 400 Watt peak power. Transient voltage suppressor diode. Nominal voltage 300 V. |
| SMBJ5917C | JGD | 1.5W silicon surface mount zener diode. Zener voltage 4.7 V. Test current 79.8 mA. +-2% tolerance. |
| P4KE75C | JGD | 400 Watt peak power. Transient voltage suppressor diode. Nominal voltage 75 V. Bidirectional. |
| HER602 | JGD | 6.0 A, high efficiency rectifier. Max recurrent peak reverse voltage 100V. |
| 1N961 | JGD | 0.5W, silicon zener diode. Zener voltage 10V. Test current 12.5mA. +-20% tolerance. |
| SMAJ6.0A | JGD | 400 W peak pulse power. Surface mount transient voltage suppressor. Working peak reverse voltage 6.0 V. |
| P6KE400CA | JGD | 400 Watt peak power. Transient voltage suppressor diode. Nominal voltage 400 V. Bidirectional. |
| SMBJ33 | JGD | Surface mount transient voltage suppressor. Breakdown voltage 36.7 V (min), 44.9 V (max). Test current 1.0 mA. |
| SR503 | JGD | Schottky barrier rectifier. Max recurrent peak reverse voltage 30 V. Max average forward current 5.0 A. |
| ZMM55-D20 | JGD | Surface mount zener diode, 500mW. Nominal zener voltage 18.8-21.2 V. Test current 5 mA. +-20% tolerance. |
| BY133 | JGD | 0.5 A silicon rectifier. Max recurrent peak reverse voltage 1400 V. |
| P4KE16CA | JGD | 400 Watt peak power. Transient voltage suppressor diode. Nominal voltage 16 V. Bidirectional. |
| SMAJ24CA | JGD | 400 W peak pulse power. Surface mount transient voltage suppressor. Working peak reverse voltage 24 V. Bidirectional. |
| 3EZ47D1 | JGD | 3 W, silicon zener diode. Nominal voltage 47 V, current 16 mA, +-1% tolerance. |
| 3EZ13D3 | JGD | 3 W, silicon zener diode. Nominal voltage 13 V, current 58 mA, +-3% tolerance. |
