| Μέρος αριθ | Κατασκευαστής | Εφαρμογή |
|---|
| 1N963C | JGD | 0.5W, silicon zener diode. Zener voltage 12V. Test current 10.5mA. +-2% tolerance. |
| ZMM55-D4V7 | JGD | Surface mount zener diode, 500mW. Nominal zener voltage 4.4-5.0 V. Test current 5 mA. +-20% tolerance. |
| 1N5934A | JGD | 1.5 W, silicon zener diode. Zener voltage 24V. Test current 15.6 mA. +-10% tolerance. |
| SMBJ24CA | JGD | Surface mount transient voltage suppressor. Breakdown voltage 26.7 V (min), 29.5 V (max). Test current 1.0 mA. Bidirectional. |
| FR107L | JGD | 1.0A, glass passivated fast recovery rectifier. Max recurrent peak reverse voltage 1000V. |
| BZX84C24 | JGD | 350mW zener diode, 24V |
| 1N5914 | JGD | 1.5 W, silicon zener diode. Zener voltage 3.6V. Test current 104.2 mA. +-20% tolerance. |
| P6KE180CA | JGD | 400 Watt peak power. Transient voltage suppressor diode. Nominal voltage 180 V. Bidirectional. |
| KBJ606G | JGD | Glass passivated single-phase bridge rectifier. Current 6.0 A. Max recurrent peak reverse voltage 600V. |
| 1N5540A | JGD | 0.4 W, low voltage avalanche diode. Nominal zener voltage 20.0 V. Test current 1.0 mAdc. +-10% tolerance. |
| 1N4100 | JGD | 500mW low noise silicon zener diode. Nominal zener voltage 7.5V. |
| 3EZ5.1D1 | JGD | 3 W, silicon zener diode. Nominal voltage 5.1 V, current 147 mA, +-1% tolerance. |
| ES1A | JGD | 1.0 A super fast recovery silicon rectifier. Max recurrent peak reverse voltage 50 V. |
| 1N4626 | JGD | 500mW low noise silicon zener diode. Nominal zener voltage 5.6V. |
| ZMM5245D | JGD | Surface mount zener diode. Nominal zener voltage 15 V. Test current 8.5 mA. +-20% tolerance. |
| SMAJ120A | JGD | 400 W peak pulse power. Surface mount transient voltage suppressor. Working peak reverse voltage 120 V. |
| ZMM55-A4V7 | JGD | Surface mount zener diode, 500mW. Nominal zener voltage 4.4-5.0 V. Test current 5 mA. +-1% tolerance. |
| SFR303 | JGD | Soft fast recovery rectifier. Max recurrent peak reverse voltage 200 V. Max average forward current 3.0 A. |
| HER207G | JGD | 2.0 A, glass passivated high efficiency rectifier. Max recurrent peak reverse voltage 800V. |
| P4KE120A | JGD | 400 Watt peak power. Transient voltage suppressor diode. Nominal voltage 120 V. |
| 3EZ28D1 | JGD | 3 W, silicon zener diode. Nominal voltage 28 V, current 27 mA, +-1% tolerance. |
| KBPC601 | JGD | Single phase 6.0 A silicon bridge rectifier. Max recurrent peak reverse voltage 100V. |
| MMBZ5232B | JGD | Surface mount zener diode. Nominal zener voltage 5.6V, test current 20.0mA. |
| 1N5406G | JGD | 3.0 A, glass passivated rectifier. Max recurrent peak reverse voltage 600 V, max RMS voltage 420 V, max D. C blocking voltage 600 V. |
| 1N4752D | JGD | 1W zener diode. Nominal zener voltage 33V. 1% tolerance. |
| SMAJ6.0CA | JGD | 400 W peak pulse power. Surface mount transient voltage suppressor. Working peak reverse voltage 6.0 V. Bidirectional. |
| SMBJ10 | JGD | Surface mount transient voltage suppressor. Breakdown voltage 11.1 V (min), 13.6 V (max). Test current 1.0 mA. |
| MMBD1704 | JGD | Surface mount switching diode. |
| 1N968A | JGD | 0.5W, silicon zener diode. Zener voltage 20V. Test current 6.2mA. +-10% tolerance. |
| 1N5913B | JGD | 1.5 W, silicon zener diode. Zener voltage 3.3V. Test current 113.6 mA. +-5% tolerance. |
