| Μέρος αριθ | Κατασκευαστής | Εφαρμογή |
|---|
| SMBJ170 | JGD | Surface mount transient voltage suppressor. Breakdown voltage 189 V (min), 231 V (max). Test current 1.0 mA. |
| IN5408 | JGD | 3.0 A, silicon rectifier. Max recurrent peak reverse voltage 1000 V, max RMS voltage 700 V, max D. C blocking voltage 1000 V. |
| ZMM5234A | JGD | Surface mount zener diode. Nominal zener voltage 6.2 V. Test current 20 mA. +-3% tolerance. |
| P6KE100A | JGD | 400 Watt peak power. Transient voltage suppressor diode. Nominal voltage 100 V. |
| SMBJ5924 | JGD | 1.5W silicon surface mount zener diode. Zener voltage 9.1 V. Test current 41.2 mA. +-20% tolerance. |
| ZMM55-D5V6 | JGD | Surface mount zener diode, 500mW. Nominal zener voltage 5.2-6.0 V. Test current 5 mA. +-20% tolerance. |
| 1N4735A | JGD | 1W zener diode. Zener voltage 6.2V. |
| SMBJ5945C | JGD | 1.5W silicon surface mount zener diode. Zener voltage 68 V. Test current 5.5 mA. +-2% tolerance. |
| BA779-2 | JGD | Surface mount switching diode. |
| 1N958D | JGD | 0.5W, silicon zener diode. Zener voltage 7.5V. Test current 16.5mA. +-1% tolerance. |
| 3EZ100D2 | JGD | 3 W, silicon zener diode. Nominal voltage 100 V, current 7.5 mA, +-2% tolerance. |
| 1N5820 | JGD | 3.0 A, schottky barrier rectifier. Max reccurent peak reverse voltage 20 V, max RMS voltage 14 V, max DC blocking voltage 20 V. |
| P4KE220 | JGD | 400 Watt peak power. Transient voltage suppressor diode. Nominal voltage 220 V. |
| SMBJ11C | JGD | Surface mount transient voltage suppressor. Breakdown voltage 12.2 V (min), 14.9 V (max). Test current 1.0 mA. Bidirectional. |
| ZMM5240C | JGD | Surface mount zener diode. Nominal zener voltage 10 V. Test current 20 mA. +-10% tolerance. |
| ZMM5250C | JGD | Surface mount zener diode. Nominal zener voltage 20 V. Test current 6.2 mA. +-10% tolerance. |
| P6KE36 | JGD | 400 Watt peak power. Transient voltage suppressor diode. Nominal voltage 36 V. |
| SMAJ16 | JGD | 400 W peak pulse power. Surface mount transient voltage suppressor. Working peak reverse voltage 16 V. |
| 3EZ9.1D | JGD | 3 W, silicon zener diode. Nominal voltage 9.1 V, current 82 mA, +-20% tolerance. |
| SF25 | JGD | Super fast rectifier. Max recurrent peak reverse voltage 300 V. Max average forward current 2.0 A. |
| SMBJ75 | JGD | Surface mount transient voltage suppressor. Breakdown voltage 83.3 V (min), 102 V (max). Test current 1.0 mA. |
| 3EZ27D3 | JGD | 3 W, silicon zener diode. Nominal voltage 27 V, current 28 mA, +-3% tolerance. |
| ZMM55-B3V6 | JGD | Surface mount zener diode, 500mW. Nominal zener voltage 3.4-3.8 V. Test current 5 mA. +-2% tolerance. |
| FR103L | JGD | 1.0A, glass passivated fast recovery rectifier. Max recurrent peak reverse voltage 200V. |
| 1N5543B | JGD | 0.4 W, low voltage avalanche diode. Nominal zener voltage 25.0 V. Test current 1.0 mAdc. +-5% tolerance. |
| 1A1G | JGD | 1.0A glass passivated rectifier. Max recurrent peak reverse voltage 50V. |
| 1N5938D | JGD | 1.5 W, silicon zener diode. Zener voltage 36V. Test current 10.4 mA. +-1% tolerance. |
| SMBJ5937 | JGD | 1.5W silicon surface mount zener diode. Zener voltage 33 V. Test current 11.4 mA. +-20% tolerance. |
| SMBJ5932A | JGD | 1.5W silicon surface mount zener diode. Zener voltage 20 V. Test current 18.7 mA. +-10% tolerance. |
| 1N5940C | JGD | 1.5 W, silicon zener diode. Zener voltage 43V. Test current 8.7 mA. +-2% tolerance. |
