| Μέρος αριθ | Κατασκευαστής | Εφαρμογή |
|---|
| P6KE22CA | JGD | 400 Watt peak power. Transient voltage suppressor diode. Nominal voltage 22 V. Bidirectional. |
| F1A7 | JGD | 1.0 A fast recovery rectifier. Max recurrent peak reverse voltage 1000 V. |
| SMBJ5936 | JGD | 1.5W silicon surface mount zener diode. Zener voltage 30 V. Test current 12.5 mA. +-20% tolerance. |
| 1N4764C | JGD | 1W zener diode. Nominal zener voltage 100V. 2% tolerance. |
| FR301G | JGD | 3.0A, glass passivated fast recovery rectifier. Max recurrent peak reverse voltage 50V. |
| SMBJ17A | JGD | Surface mount transient voltage suppressor. Breakdown voltage 18.9 V (min), 20.9 V (max). Test current 1.0 mA. |
| 1N4134C | JGD | 500mW low noise silicon zener diode. Nominal zener voltage 91V. 2% tolerance. |
| 1N4745D | JGD | 1W zener diode. Nominal zener voltage 16V. 1% tolerance. |
| SR308 | JGD | Schottky barrier rectifier. Max recurrent peak reverse voltage 80 V. Max average forward current 3.0 A. |
| P6KE150CA | JGD | 400 Watt peak power. Transient voltage suppressor diode. Nominal voltage 150 V. Bidirectional. |
| SMBJ12CA | JGD | Surface mount transient voltage suppressor. Breakdown voltage 13.3 V (min), 14.7 V (max). Test current 1.0 mA. Bidirectional. |
| P4KE180 | JGD | 400 Watt peak power. Transient voltage suppressor diode. Nominal voltage 180 V. |
| KBU604G | JGD | Single phase 6.0 A glass passivated bridge rectifier. Max recurrent peak reverse voltage 400V. |
| SMBJ5936D | JGD | 1.5W silicon surface mount zener diode. Zener voltage 30 V. Test current 12.5 mA. +-1% tolerance. |
| SR750 | JGD | Schottky barrier rectifier (single chip). Max repetitive peak reverse voltage 50 V. Max average forward current 7.5 A. |
| P4KE13 | JGD | 400 Watt peak power. Transient voltage suppressor diode. Nominal voltage 13 V. |
| P6KE36C | JGD | 400 Watt peak power. Transient voltage suppressor diode. Nominal voltage 36 V. Bidirectional. |
| 1N4615 | JGD | 500mW low noise silicon zener diode. Nominal zener voltage 2.0V. |
| SMBJ5942D | JGD | 1.5W silicon surface mount zener diode. Zener voltage 51 V. Test current 7.3 mA. +-1% tolerance. |
| 1N4105D | JGD | 500mW low noise silicon zener diode. Nominal zener voltage 11V. 1% tolerance. |
| KBU600G | JGD | Single phase 6.0 A glass passivated bridge rectifier. Max recurrent peak reverse voltage 50V. |
| 3EZ68D | JGD | 3 W, silicon zener diode. Nominal voltage 68 V, current 11 mA, +-20% tolerance. |
| SMBJ160 | JGD | Surface mount transient voltage suppressor. Breakdown voltage 178 V (min), 218 V (max). Test current 1.0 mA. |
| SF11G | JGD | Glass passivated super fast rectifier. Max recurrent peak reverse voltage 50 V. Max average forward current 1.0 A. |
| 1N5817 | JGD | 1.0 A, schottky barrier rectifier. Max reccurent peak reverse voltage 20 V, max RMS voltage 14 V, max DC blocking voltage 20 V. |
| BAW56 | JGD | Surface mount switching diode. Max forward voltage 1.00V at 50mA. |
| 1N4623 | JGD | 500mW low noise silicon zener diode. Nominal zener voltage 4.3V. |
| 3EZ200D10 | JGD | 3 W, silicon zener diode. Nominal voltage 200 V, current 3.7 mA, +-10% tolerance. |
| 3EZ43D5 | JGD | 3 W, silicon zener diode. Nominal voltage 43 V, current 17 mA, +-5% tolerance. |
| 3EZ4.7D2 | JGD | 3 W, silicon zener diode. Nominal voltage 4.7V, current 160mA, +-2% tolerance. |
