| Μέρος αριθ | Κατασκευαστής | Εφαρμογή |
|---|
| 3EZ4.3D3 | JGD | 3 W, silicon zener diode. Nominal voltage 4.3V, current 174mA, +-3% tolerance. |
| 1N5918B | JGD | 1.5 W, silicon zener diode. Zener voltage 5.1V. Test current 73.5 mA. +-5% tolerance. |
| 1N4105 | JGD | 500mW low noise silicon zener diode. Nominal zener voltage 11V. |
| P4KE22 | JGD | 400 Watt peak power. Transient voltage suppressor diode. Nominal voltage 22 V. |
| SR306 | JGD | Schottky barrier rectifier. Max recurrent peak reverse voltage 60 V. Max average forward current 3.0 A. |
| BAS20 | JGD | Surface mount switching diode. Max forward voltage 1.00V at 100mA. |
| 1N748 | JGD | 500mW, silicon zener diode. Zener voltage 3.9 V. Test current 20 mA. +-10% standard tolerance. |
| 1N4757 | JGD | 1W zener diode. Nominal zener voltage 51V. 10% tolerance. |
| SMAJ130C | JGD | 400 W peak pulse power. Surface mount transient voltage suppressor. Working peak reverse voltage 130 V. Bidirectional. |
| 1N4101 | JGD | 500mW low noise silicon zener diode. Nominal zener voltage 8.2V. |
| FR307G | JGD | 3.0A, glass passivated fast recovery rectifier. Max recurrent peak reverse voltage 1000V. |
| P6KE180A | JGD | 400 Watt peak power. Transient voltage suppressor diode. Nominal voltage 180 V. |
| 1N4757C | JGD | 1W zener diode. Nominal zener voltage 51V. 2% tolerance. |
| 1N5918D | JGD | 1.5 W, silicon zener diode. Zener voltage 5.1V. Test current 73.5 mA. +-1% tolerance. |
| F1A4G | JGD | 1.0 A glass passivated fast recovery rectifier. Max recurrent peak reverse voltage 400 V. |
| SMBJ30A | JGD | Surface mount transient voltage suppressor. Breakdown voltage 33.3 V (min), 36.8 V (max). Test current 1.0 mA. |
| SMAJ17CA | JGD | 400 W peak pulse power. Surface mount transient voltage suppressor. Working peak reverse voltage 17 V. Bidirectional. |
| MMBZ5234B | JGD | Surface mount zener diode. Nominal zener voltage 6.2V, test current 20.0mA. |
| 1N5938 | JGD | 1.5 W, silicon zener diode. Zener voltage 36V. Test current 10.4 mA. +-20% tolerance. |
| HER605 | JGD | 6.0 A, high efficiency rectifier. Max recurrent peak reverse voltage 400V. |
| 1N5950D | JGD | 1.5 W, silicon zener diode. Zener voltage 110 V. Test current 3.4 mA. +-1% tolerance. |
| 1N987A | JGD | 0.5W, silicon zener diode. Zener voltage 120V. Test current 1.0mA. +-10% tolerance. |
| SMAJ120CA | JGD | 400 W peak pulse power. Surface mount transient voltage suppressor. Working peak reverse voltage 120 V. Bidirectional. |
| SMBJ22A | JGD | Surface mount transient voltage suppressor. Breakdown voltage 24.4 V (min), 26.9 V (max). Test current 1.0 mA. |
| KBP210G | JGD | Single-phase 2.0 A glass passivated bridge rectifier. Max recurrent peak reverse voltage 1000V. |
| ZMM5259A | JGD | Surface mount zener diode. Nominal zener voltage 39 V. Test current 3.2 mA. +-3% tolerance. |
| SMAJ22 | JGD | 400 W peak pulse power. Surface mount transient voltage suppressor. Working peak reverse voltage 22 V. |
| 1N5540B | JGD | 0.4 W, low voltage avalanche diode. Nominal zener voltage 20.0 V. Test current 1.0 mAdc. +-5% tolerance. |
| HER108L | JGD | 1.0A, glass passivated high efficiency rectifier. Max recurrent peak reverse voltage 1000V. |
| BZX84C18 | JGD | 350mW zener diode, 18V |
