| Μέρος αριθ | Κατασκευαστής | Εφαρμογή |
|---|
| 1N5930C | JGD | 1.5 W, silicon zener diode. Zener voltage 16V. Test current 23.4 mA. +-2% tolerance. |
| 1N4127C | JGD | 500mW low noise silicon zener diode. Nominal zener voltage 56V. 2% tolerance. |
| SS18 | JGD | Surface mount schottky barrier rectifier. Max recurrent peak reverse voltage 80 V. Max average forward rectified current 1.0 A. |
| FR154G | JGD | 1.5A, glass passivated fast recovery rectifier. Max recurrent peak reverse voltage 400V. |
| P4KE180CA | JGD | 400 Watt peak power. Transient voltage suppressor diode. Nominal voltage 180 V. Bidirectional. |
| BZX84C11 | JGD | 350mW zener diode, 11V |
| SMAJ110A | JGD | 400 W peak pulse power. Surface mount transient voltage suppressor. Working peak reverse voltage 110 V. |
| MUR410 | JGD | 4.0A ultra fast rectifier. Max recurrent peak reverse voltage 100V. |
| 1N968C | JGD | 0.5W, silicon zener diode. Zener voltage 20V. Test current 6.2mA. +-2% tolerance. |
| SMAJ8.0CA | JGD | 400 W peak pulse power. Surface mount transient voltage suppressor. Working peak reverse voltage 8.0 V. Bidirectional. |
| SFR1A4 | JGD | Soft fast recovery rectifier. Max recurrent peak reverse voltage 400 V. Max average forward current 1.0 A. |
| ZMM55-C3V9 | JGD | Surface mount zener diode, 500mW. Nominal zener voltage 3.7-4.1 V. Test current 5 mA. +-5% tolerance. |
| 3EZ12D10 | JGD | 3 W, silicon zener diode. Nominal voltage 12 V, current 63 mA, +-10% tolerance. |
| 1N5538D | JGD | 0.4 W, low voltage avalanche diode. Nominal zener voltage 18.0 V. Test current 1.0 mAdc. +-1% tolerance. |
| S1B | JGD | Surface mount rectifier. Max recurrent peak reverse voltage 100 V. Max average forward rectified current 1.0 A. |
| 1N5931C | JGD | 1.5 W, silicon zener diode. Zener voltage 18V. Test current 20.8 mA. +-2% tolerance. |
| SMBJ5920A | JGD | 1.5W silicon surface mount zener diode. Zener voltage 6.2 V. Test current 60.5 mA. +-10% tolerance. |
| 1N965D | JGD | 0.5W, silicon zener diode. Zener voltage 15V. Test current 8.5mA. +-1% tolerance. |
| FS1A | JGD | 1.0A, fast recovery silicon rectifier. Max recurrent peak reverse voltage 50V. |
| 1N5529 | JGD | 0.4 W, low voltage avalanche diode. Nominal zener voltage 9.1 V. Test current 1.0 mAdc. +-20% tolerance. |
| 3EZ140D5 | JGD | 3 W, silicon zener diode. Nominal voltage 140 V, current 5.3 mA, +-5% tolerance. |
| SMBJ120A | JGD | Surface mount transient voltage suppressor. Breakdown voltage 133 V (min), 147 V (max). Test current 1.0 mA. |
| 1N4127D | JGD | 500mW low noise silicon zener diode. Nominal zener voltage 56V. 1% tolerance. |
| 1N968D | JGD | 0.5W, silicon zener diode. Zener voltage 20V. Test current 6.2mA. +-1% tolerance. |
| 1N5926A | JGD | 1.5 W, silicon zener diode. Zener voltage 11V. Test current 34.1 mA. +-10% tolerance. |
| P4KE91A | JGD | 400 Watt peak power. Transient voltage suppressor diode. Nominal voltage 91 V. |
| P4KE39C | JGD | 400 Watt peak power. Transient voltage suppressor diode. Nominal voltage 39 V. Bidirectional. |
| HER102L | JGD | 1.0A, glass passivated high efficiency rectifier. Max recurrent peak reverse voltage 100V. |
| 1N5936A | JGD | 1.5 W, silicon zener diode. Zener voltage 30V. Test current 12.5 mA. +-10% tolerance. |
| 3EZ14D | JGD | 3 W, silicon zener diode. Nominal voltage 14 V, current 53 mA, +-20% tolerance. |
