| Μέρος αριθ | Κατασκευαστής | Εφαρμογή |
|---|
| MUR130 | JGD | 1.0A ultra fast rectifier. Max recurrent peak reverse voltage 300V. |
| P6KE12CA | JGD | 400 Watt peak power. Transient voltage suppressor diode. Nominal voltage 12 V. Bidirectional. |
| ZMM5221B | JGD | Surface mount zener diode. Nominal zener voltage 2.4 V. Test current 20 mA. +-5% tolerance. |
| 1N4736A | JGD | 1W zener diode. Zener voltage 6.8V. |
| DF06G | JGD | Single phase 1.0 A glass passivated bridge rectifier. Max recurrent peak reverse voltage 600 V. |
| 3EZ4.3D4 | JGD | 3 W, silicon zener diode. Nominal voltage 4.3V, current 174mA, +-4% tolerance. |
| FS2D | JGD | 1.5A, fast recovery silicon rectifier. Max recurrent peak reverse voltage 200V. |
| 1N5525 | JGD | 0.4 W, low voltage avalanche diode. Nominal zener voltage 6.2 V. Test current 1.0 mAdc. +-20% tolerance. |
| 1N5945D | JGD | 1.5 W, silicon zener diode. Zener voltage 68 V. Test current 5.5 mA. +-1% tolerance. |
| 1N5934D | JGD | 1.5 W, silicon zener diode. Zener voltage 24V. Test current 15.6 mA. +-1% tolerance. |
| SMBJ5944A | JGD | 1.5W silicon surface mount zener diode. Zener voltage 62 V. Test current 6.0 mA. +-10% tolerance. |
| 1N5528D | JGD | 0.4 W, low voltage avalanche diode. Nominal zener voltage 8.2 V. Test current 1.0 mAdc. +-1% tolerance. |
| BB804 | JGD | Surface mount switching diode. |
| 3EZ39D | JGD | 3 W, silicon zener diode. Nominal voltage 39 V, current 19 mA, +-20% tolerance. |
| 3EZ3.9D1 | JGD | 3 W, silicon zener diode. Nominal voltage 3.9V, current 192mA, +-1% tolerance. |
| P4KE30C | JGD | 400 Watt peak power. Transient voltage suppressor diode. Nominal voltage 30 V. Bidirectional. |
| 3EZ19D3 | JGD | 3 W, silicon zener diode. Nominal voltage 19 V, current 40 mA, +-3% tolerance. |
| SMAJ16C | JGD | 400 W peak pulse power. Surface mount transient voltage suppressor. Working peak reverse voltage 16 V. Bidirectional. |
| P6KE170 | JGD | 400 Watt peak power. Transient voltage suppressor diode. Nominal voltage 170 V. |
| HA15G | JGD | 1.0A, glass passivated high efficiency rectifier. Max recurrent peak reverse voltage 400V. |
| FS2M | JGD | 1.5A, fast recovery silicon rectifier. Max recurrent peak reverse voltage 1000V. |
| SMAJ6.5A | JGD | 400 W peak pulse power. Surface mount transient voltage suppressor. Working peak reverse voltage 6.5 V. |
| SF16G | JGD | Glass passivated super fast rectifier. Max recurrent peak reverse voltage 400 V. Max average forward current 1.0 A. |
| SMAJ14A | JGD | 400 W peak pulse power. Surface mount transient voltage suppressor. Working peak reverse voltage 14 V. |
| 1N957D | JGD | 0.5W, silicon zener diode. Zener voltage 6.8V. Test current 18.5mA. +-1% tolerance. |
| ES1J | JGD | 1.0 A super fast recovery silicon rectifier. Max recurrent peak reverse voltage 600 V. |
| 1N5398 | JGD | 1.5 A, silicon rectifier. Max recurrent peak reverse voltage 800 V, max RMS voltage 560 V, max D. C blocking voltage 800 V. |
| 1W010 | JGD | Single phase 1.0 A silicon bridge rectifier. Max recurrent peak reverse voltage 1000 V. |
| 1N959B | JGD | 0.5W, silicon zener diode. Zener voltage 8.2V. Test current 15.0mA. +-5% tolerance. |
| 1N5932 | JGD | 1.5 W, silicon zener diode. Zener voltage 20V. Test current 18.7 mA. +-20% tolerance. |
