| Μέρος αριθ | Κατασκευαστής | Εφαρμογή |
|---|
| SMAJ64C | JGD | 400 W peak pulse power. Surface mount transient voltage suppressor. Working peak reverse voltage 64 V. Bidirectional. |
| SMAJ120 | JGD | 400 W peak pulse power. Surface mount transient voltage suppressor. Working peak reverse voltage 120 V. |
| P4KE250CA | JGD | 400 Watt peak power. Transient voltage suppressor diode. Nominal voltage 250 V. Bidirectional. |
| MR851 | JGD | 3.0A, fast recovery rectifier. Max recurrent peak reverse voltage 100V. |
| SMBJ7.5C | JGD | Surface mount transient voltage suppressor. Breakdown voltage 8.33 V (min), 10.3 V (max). Test current 1.0 mA. Bidirectional. |
| ZMM55-B36 | JGD | Surface mount zener diode, 500mW. Nominal zener voltage 34-38 V. Test current 5 mA. +-2% tolerance. |
| ZMM5260A | JGD | Surface mount zener diode. Nominal zener voltage 43 V. Test current 3 mA. +-3% tolerance. |
| 1N4371C | JGD | 500mW, silicon zener diode. Zener voltage 2.7 V. Test current 20 mA. +-2% tolerance. |
| SMBJ28 | JGD | Surface mount transient voltage suppressor. Breakdown voltage 31.1 V (min), 38.0 V (max). Test current 1.0 mA. |
| SS23 | JGD | Surface mount schottky barrier rectifier. Max recurrent peak reverse voltage 30 V. Max average forward rectified current 2.0 A. |
| P6KE39C | JGD | 400 Watt peak power. Transient voltage suppressor diode. Nominal voltage 39 V. Bidirectional. |
| SMBJ5930 | JGD | 1.5W silicon surface mount zener diode. Zener voltage 16 V. Test current 23.4 mA. +-20% tolerance. |
| ZMM5241B | JGD | Surface mount zener diode. Nominal zener voltage 11 V. Test current 20 mA. +-5% tolerance. |
| KBP204 | JGD | Single-phase 2.0 A silicon bridge rectifier. Max recurrent peak reverse voltage 400V. |
| 1N4115 | JGD | 500mW low noise silicon zener diode. Nominal zener voltage 22V. |
| SMBJ5924C | JGD | 1.5W silicon surface mount zener diode. Zener voltage 9.1 V. Test current 41.2 mA. +-2% tolerance. |
| 3EZ100D | JGD | 3 W, silicon zener diode. Nominal voltage 100 V, current 7.5 mA, +-20% tolerance. |
| 1N4764A | JGD | 1W zener diode. Zener voltage 100V. |
| SMBJ70 | JGD | Surface mount transient voltage suppressor. Breakdown voltage 77.6 V (min), 95.1 V (max). Test current 1.0 mA. |
| SMBJ8.0CA | JGD | Surface mount transient voltage suppressor. Breakdown voltage 8.89 V (min), 9.83 V (max). Test current 1.0 mA. Bidirectional. |
| SMAJ60 | JGD | 400 W peak pulse power. Surface mount transient voltage suppressor. Working peak reverse voltage 60 V. |
| 3EZ10D1 | JGD | 3 W, silicon zener diode. Nominal voltage 10 V, current 75 mA, +-1% tolerance. |
| 3EZ140D | JGD | 3 W, silicon zener diode. Nominal voltage 140 V, current 5.3 mA, +-20% tolerance. |
| BZX84C39 | JGD | 350mW zener diode, 39V |
| SMBJ130A | JGD | Surface mount transient voltage suppressor. Breakdown voltage 144 V (min), 159 V (max). Test current 1.0 mA. |
| 1N5533D | JGD | 0.4 W, low voltage avalanche diode. Nominal zener voltage 13.0 V. Test current 1.0 mAdc. +-1% tolerance. |
| SMAJ58 | JGD | 400 W peak pulse power. Surface mount transient voltage suppressor. Working peak reverse voltage 58 V. |
| SMBJ5917D | JGD | 1.5W silicon surface mount zener diode. Zener voltage 4.7 V. Test current 79.8 mA. +-1% tolerance. |
| 1N749 | JGD | 500mW, silicon zener diode. Zener voltage 4.3 V. Test current 20 mA. +-10% standard tolerance. |
| SF14LG | JGD | Glass passivated super fast rectifier. Max recurrent peak reverse voltage 200 V. Max average forward current 1.0 A. |
