| Μέρος αριθ | Κατασκευαστής | Εφαρμογή |
|---|
| SF65 | JGD | Super fast rectifier. Max recurrent peak reverse voltage 300 V. Max average forward current 6.0 A. |
| 1N5936C | JGD | 1.5 W, silicon zener diode. Zener voltage 30V. Test current 12.5 mA. +-2% tolerance. |
| P4KE180C | JGD | 400 Watt peak power. Transient voltage suppressor diode. Nominal voltage 180 V. Bidirectional. |
| HER204G | JGD | 2.0 A, glass passivated high efficiency rectifier. Max recurrent peak reverse voltage 300V. |
| KBL406 | JGD | Single-phase 4.0 A silicon bridge rectifier. Max recurrent peak reverse voltage 600V. |
| SMAJ33C | JGD | 400 W peak pulse power. Surface mount transient voltage suppressor. Working peak reverse voltage 33 V. Bidirectional. |
| ZMM55-B20 | JGD | Surface mount zener diode, 500mW. Nominal zener voltage 18.8-21.2 V. Test current 5 mA. +-2% tolerance. |
| FR604 | JGD | 6.0A, fast recovery rectifier. Max recurrent peak reverse voltage 400V. |
| 1N4750 | JGD | 1W zener diode. Nominal zener voltage 27V. 10% tolerance. |
| SMAJ11 | JGD | 400 W peak pulse power. Surface mount transient voltage suppressor. Working peak reverse voltage 11 V. |
| SMAJ48CA | JGD | 400 W peak pulse power. Surface mount transient voltage suppressor. Working peak reverse voltage 48 V. Bidirectional. |
| 3EZ200D3 | JGD | 3 W, silicon zener diode. Nominal voltage 200 V, current 3.7 mA, +-3% tolerance. |
| 1N4370 | JGD | 500mW, silicon zener diode. Zener voltage 2.4 V. Test current 20 mA. +-10% standard tolerance. |
| 1N5401G | JGD | 3.0 A, glass passivated rectifier. Max recurrent peak reverse voltage 100 V, max RMS voltage 70 V, max D. C blocking voltage 100 V. |
| P4KE400A | JGD | 400 Watt peak power. Transient voltage suppressor diode. Nominal voltage 400 V. |
| 1N5531D | JGD | 0.4 W, low voltage avalanche diode. Nominal zener voltage 11.0 V. Test current 1.0 mAdc. +-1% tolerance. |
| SMBJ5927C | JGD | 1.5W silicon surface mount zener diode. Zener voltage 12 V. Test current 31.2 mA. +-2% tolerance. |
| 3EZ110D2 | JGD | 3 W, silicon zener diode. Nominal voltage 110 V, current 6.8 mA, +-2% tolerance. |
| 1N982 | JGD | 0.5W, silicon zener diode. Zener voltage 75V. Test current 1.7mA. +-20% tolerance. |
| 1N973D | JGD | 0.5W, silicon zener diode. Zener voltage 33V. Test current 3.8mA. +-1% tolerance. |
| ZMM55-A47 | JGD | Surface mount zener diode, 500mW. Nominal zener voltage 44-50 V. Test current 2.5 mA. +-1% tolerance. |
| P4KE8.2 | JGD | 400 Watt peak power. Transient voltage suppressor diode. Nominal voltage 8.2 V. |
| SF12 | JGD | Super fast rectifier. Max recurrent peak reverse voltage 100 V. Max average forward current 1.0 A. |
| 1N4100D | JGD | 500mW low noise silicon zener diode. Nominal zener voltage 7.5V. 1% tolerance. |
| SMBJ150A | JGD | Surface mount transient voltage suppressor. Breakdown voltage 167 V (min), 185 V (max). Test current 1.0 mA. |
| 3EZ68D3 | JGD | 3 W, silicon zener diode. Nominal voltage 68 V, current 11 mA, +-3% tolerance. |
| MMBZ5232B | JGD | Surface mount zener diode. Nominal zener voltage 5.6V, test current 20.0mA. |
| HER304G | JGD | 3.0 A, glass passivated high efficiency rectifier. Max recurrent peak reverse voltage 300V. |
| 1N992A | JGD | 0.5W, silicon zener diode. Zener voltage 200V. Test current 0.65mA. +-10% tolerance. |
| 1N4109C | JGD | 500mW low noise silicon zener diode. Nominal zener voltage 15V. 2% tolerance. |
