| Μέρος αριθ | Κατασκευαστής | Εφαρμογή |
|---|
| SF12 | JGD | Super fast rectifier. Max recurrent peak reverse voltage 100 V. Max average forward current 1.0 A. |
| SMAJ10 | JGD | 400 W peak pulse power. Surface mount transient voltage suppressor. Working peak reverse voltage 10 V. |
| 1N4123 | JGD | 500mW low noise silicon zener diode. Nominal zener voltage 39V. |
| SF15LG | JGD | Glass passivated super fast rectifier. Max recurrent peak reverse voltage 300 V. Max average forward current 1.0 A. |
| SF14 | JGD | Super fast rectifier. Max recurrent peak reverse voltage 200 V. Max average forward current 1.0 A. |
| SMAJ36 | JGD | 400 W peak pulse power. Surface mount transient voltage suppressor. Working peak reverse voltage 36 V. |
| P4KE18A | JGD | 400 Watt peak power. Transient voltage suppressor diode. Nominal voltage 18 V. |
| 1N754D | JGD | 500mW, silicon zener diode. Zener voltage 6.8 V. Test current 20 mA. +-1% tolerance. |
| 1N4737D | JGD | 1W zener diode. Nominal zener voltage 7.5V. 1% tolerance. |
| 1N4621 | JGD | 500mW low noise silicon zener diode. Nominal zener voltage 3.6V. |
| 1N990D | JGD | 0.5W, silicon zener diode. Zener voltage 160V. Test current 0.80mA. +-1% tolerance. |
| SMBJ5.0A | JGD | Surface mount transient voltage suppressor. Breakdown voltage 6.40 V (min), 7.00 V (max). Test current 10.0 mA. |
| SMBJ5925B | JGD | 1.5W silicon surface mount zener diode. Zener voltage 10 V. Test current 37.5 mA. +-5% tolerance. |
| SMAJ58 | JGD | 400 W peak pulse power. Surface mount transient voltage suppressor. Working peak reverse voltage 58 V. |
| P6KE6.8CA | JGD | 400 Watt peak power. Transient voltage suppressor diode. Nominal voltage 6.8 V. Bidirectional. |
| ZMM5222A | JGD | Surface mount zener diode. Nominal zener voltage 2.5 V. Test current 20 mA. +-3% tolerance. |
| SMBJ5940B | JGD | 1.5W silicon surface mount zener diode. Zener voltage 43 V. Test current 8.7 mA. +-5% tolerance. |
| SMBJ40C | JGD | Surface mount transient voltage suppressor. Breakdown voltage 44.4 V (min), 54.3 V (max). Test current 1.0 mA. Bidirectional. |
| 3EZ18D1 | JGD | 3 W, silicon zener diode. Nominal voltage 18 V, current 42 mA, +-1% tolerance. |
| 1N4614C | JGD | 500mW low noise silicon zener diode. Nominal zener voltage 1.8V. 2% tolerance. |
| ZMM5240D | JGD | Surface mount zener diode. Nominal zener voltage 10 V. Test current 20 mA. +-20% tolerance. |
| SMBJ5942A | JGD | 1.5W silicon surface mount zener diode. Zener voltage 51 V. Test current 7.3 mA. +-10% tolerance. |
| UF5408G | JGD | Glass passivated ultra fast rectifier. Max recurrent peak reverse voltage 1000 V. Max average forward rectified current 3.0 A. |
| MR852 | JGD | 3.0A, fast recovery rectifier. Max recurrent peak reverse voltage 200V. |
| P4KE20 | JGD | 400 Watt peak power. Transient voltage suppressor diode. Nominal voltage 20 V. |
| 1N4122D | JGD | 500mW low noise silicon zener diode. Nominal zener voltage 36V. 1% tolerance. |
| SF15LG | JGD | Glass passivated super fast rectifier. Max recurrent peak reverse voltage 300 V. Max average forward current 1.0 A. |
| SR240 | JGD | Schottky barrier rectifier. Max recurrent peak reverse voltage 40 V. Max average forward current 2.0 A. |
| FR106G | JGD | 1.0A, glass passivated fast recovery rectifier. Max recurrent peak reverse voltage 800V. |
| 1N5935C | JGD | 1.5 W, silicon zener diode. Zener voltage 27V. Test current 13.9 mA. +-2% tolerance. |
