| Μέρος αριθ | Κατασκευαστής | Εφαρμογή |
|---|
| SMBJ5951 | JGD | 1.5W silicon surface mount zener diode. Zener voltage 120 V. Test current 3.1 mA. +-20% tolerance. |
| SMAJ8.0 | JGD | 400 W peak pulse power. Surface mount transient voltage suppressor. Working peak reverse voltage 8.0 V. |
| 3EZ24D4 | JGD | 3 W, silicon zener diode. Nominal voltage 24 V, current 31 mA, +-4% tolerance. |
| 1N5914C | JGD | 1.5 W, silicon zener diode. Zener voltage 3.6V. Test current 104.2 mA. +-2% tolerance. |
| P6KE39CA | JGD | 400 Watt peak power. Transient voltage suppressor diode. Nominal voltage 39 V. Bidirectional. |
| SMAJ14C | JGD | 400 W peak pulse power. Surface mount transient voltage suppressor. Working peak reverse voltage 14 V. Bidirectional. |
| P4KE10 | JGD | 400 Watt peak power. Transient voltage suppressor diode. Nominal voltage 10 V. |
| 1N749C | JGD | 500mW, silicon zener diode. Zener voltage 4.3 V. Test current 20 mA. +-2% tolerance. |
| SMBJ5920D | JGD | 1.5W silicon surface mount zener diode. Zener voltage 6.2 V. Test current 60.5 mA. +-1% tolerance. |
| SF23 | JGD | Super fast rectifier. Max recurrent peak reverse voltage 150 V. Max average forward current 2.0 A. |
| SMAJ22C | JGD | 400 W peak pulse power. Surface mount transient voltage suppressor. Working peak reverse voltage 22 V. Bidirectional. |
| P4KE22 | JGD | 400 Watt peak power. Transient voltage suppressor diode. Nominal voltage 22 V. |
| GS1M | JGD | 1.0A, surface mount rectifier. Max recurrent peak reverse voltage 1000V. |
| 1N5921B | JGD | 1.5 W, silicon zener diode. Zener voltage 6.8V. Test current 55.1 mA. +-5% tolerance. |
| 1N960A | JGD | 0.5W, silicon zener diode. Zener voltage 9.1V. Test current 14.0mA. +-10% tolerance. |
| SMBJ85A | JGD | Surface mount transient voltage suppressor. Breakdown voltage 94.4 V (min), 104 V (max). Test current 1.0 mA. |
| ZMM55-C47 | JGD | Surface mount zener diode, 500mW. Nominal zener voltage 44-50 V. Test current 2.5 mA. +-5% tolerance. |
| SMAJ6.0CA | JGD | 400 W peak pulse power. Surface mount transient voltage suppressor. Working peak reverse voltage 6.0 V. Bidirectional. |
| ES1C | JGD | 1.0 A super fast recovery silicon rectifier. Max recurrent peak reverse voltage 150 V. |
| HER101G | JGD | 1.0A, glass passivated high efficiency rectifier. Max recurrent peak reverse voltage 50V. |
| 3EZ22D4 | JGD | 3 W, silicon zener diode. Nominal voltage 22 V, current 34 mA, +-4% tolerance. |
| 1N5534C | JGD | 0.4 W, low voltage avalanche diode. Nominal zener voltage 14.0 V. Test current 1.0 mAdc. +-2% tolerance. |
| 1N4109 | JGD | 500mW low noise silicon zener diode. Nominal zener voltage 15V. |
| 3EZ8.2D5 | JGD | 3 W, silicon zener diode. Nominal voltage 8.2 V, current 91 mA, +-5% tolerance. |
| P6KE9.1 | JGD | 400 Watt peak power. Transient voltage suppressor diode. Nominal voltage 9.1 V. |
| IN5407 | JGD | 3.0 A, silicon rectifier. Max recurrent peak reverse voltage 800 V, max RMS voltage 560 V, max D. C blocking voltage 800 V. |
| SFR205 | JGD | Soft fast recovery rectifier. Max recurrent peak reverse voltage 600 V. Max average forward current 2.0 A. |
| SMAJ15CA | JGD | 400 W peak pulse power. Surface mount transient voltage suppressor. Working peak reverse voltage 15 V. Bidirectional. |
| 3EZ36D1 | JGD | 3 W, silicon zener diode. Nominal voltage 36 V, current 21 mA, +-1% tolerance. |
| 1N988A | JGD | 0.5W, silicon zener diode. Zener voltage 130V. Test current 0.95mA. +-10% tolerance. |
